V 1700 V DS I 25C 5.0 A D C2M1000170D R 1.0 DS(on) Silicon Carbide Power MOSFET TM C2M MOSFET Technology N-Channel Enhancement Mode Features Package High Speed Switching with Low Capacitances High Blocking Voltage with Low R DS(on) Easy to Parallel and Simple to Drive Ultra-low Drain-gate capacitance Halogen Free, RoHS Compliant Benefits TO-247-3 Higher System Efficiency Increased System Switching Frequency Reduced Cooling Requirements Increased System Reliability Applications Auxiliary Power Supplies Switch Mode Power Supplies High-voltage Capacitive Loads Part Number Package C2M1000170D TO-247-3 Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note V = 0 V, I = 100 A V Drain - Source Voltage 1700 V GS D DSmax Gate - Source Voltage -10/+25 V Absolute maximum values V GSmax Gate - Source Voltage -5/+20 V Recommended operational values V GSop 5.0 Fig. 19 V = 20 V, T = 25C GS C Continuous Drain Current A I D 3.5 V = 20 V, T = 100C GS C Pulsed Drain Current 6.0 A Fig. 22 I D(pulse) Pulse width t limited by T jmax P Power Dissipation 69 W T =25C, T = 150 C Fig. 20 P C J D -55 to Operating Junction and Storage Temperature C T , T J stg +150 Solder Temperature 260 C 1.6mm (0.063) from case for 10s T L 1 Nm Mounting Torque M3 or 6-32 screw M d 8.8 lbf-in C2M1000170D Rev. E, 10-2015 1Electrical Characteristics (T = 25C unless other wise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 1700 V V = 0 V, I = 100 A (BR)DSS GS D 2.0 2.6 4 V = V , I = 0.5 mA DS GS D V Fig. 11 V Gate Threshold Voltage GS(th) 2.1 V = V I = 0.5 mA, T = 150 C DS GS, D J V I Zero Gate Voltage Drain Current 1 100 A V = 1.7 kV, V = 0 V DSS DS GS I Gate-Source Leakage Current 250 nA V = 20 V, V = 0 V GSS GS DS 1.0 1.4 V = 20 V, I = 2 A GS D R Drain-Source On-State Resistance Fig. 4,5,6 DS(on) 2.0 V = 20 V, I = 2 A, T = 150 C GS D J 0.82 VDS= 20 V, IDS= 2 A Fig. 7 gfs Transconductance S 0.81 V = 20 V, I = 2 A, T = 150 C DS DS J Ciss Input Capacitance 200 VGS = 0 V C Output Capacitance 12 oss pF Fig. 17,18 VDS = 1000 V C Reverse Transfer Capacitance 1.3 rss f = 1 MHz AC V = 25 mV Fig 16 E C Stored Energy 7 J oss oss V = 1.2 kV, V = -5/20 V E Turn-On Switching Energy 40 DS GS ON J I = 2 A, R = 2.5 , Fig. 26 D G(ext) E Turn Off Switching Energy 15 OFF L= 1478 H, T = 150 C J 6 t Turn-On Delay Time d(on) VDD = 1.2 kV, VGS = -5/20 V 10.5 t Rise Time r ID = 2 A, RG(ext) = 2.5 , R = 600 L ns Fig. 27 Timing relative to V 11 DS t Turn-Off Delay Time d(off) Per IEC60747-8-4 pg 83 60 t Fall Time f , RG(int) Internal Gate Resistance 24.8 f = 1 MHz VAC = 25 mV Q Gate to Source Charge 4.7 gs V = 1.2 kV, V = -5/20 V DS GS Fig. 12 I = 2 A Qgd Gate to Drain Charge 5.4 nC D Per IEC60747-8-4 pg 21 Q Total Gate Charge 13 g Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 3.8 V V = - 5 V, I = 1 A, T = 25 C GS SD J Fig. 8, 9, V Diode Forward Voltage SD 10 3.3 V V = - 5 V, I = 1 A, T = 150 C GS SD J Note 1 IS Continuous Diode Forward Current 4 A T = 25 C C t Reverse Recovery Time 20 ns V = - 5 V, I = 2 A T = 25 C rr GS SD J V = 1.2 kV R Note 1 Q Reverse Recovery Charge 24 nC rr dif/dt = 1200 A/s I Peak Reverse Recovery Current 6.5 A rrm Note (1): When using SiC Body Diode the maximum recommended V = -5V GS Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 1.7 1.8 JC Fig. 21 C/W RJC Thermal Resistance from Junction to Ambient 40 C2M1000170D Rev. E, 10-2015 2