NTLUS3A18PZCTCG ON Semiconductor

NTLUS3A18PZC Power MOSFET 20 V, 8.2 A, Single PChannel, 2.0x2.0x0.55 mm Cool UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction NTLUS3A18PZC THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient Steady State (Note 3) R 72 JA Junction-to-Ambient t 5 s (Note 3) R 33 C/W JA Junction-to-Ambient Steady State min Pad (Note 4) R 189 JA 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz. Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T +10 mV/C I = 250 A, ref to 25C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 20 V DS Gate-to-Source Leakage Current I V = 0 V, V = 5.0 V 5 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 0.4 1.0 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T 3.0 mV/C GS(TH) J Drain-to-Source On Resistance R m V = 4.5 V, I = 7.0 A 14.6 18 DS(on) GS D V = 2.5 V, I = 5.0 A 19 25 GS D V = 1.8 V, I = 3.0 A 25 50 GS D V = 1.5 V, I = 1.0 A 40 90 GS D Forward Transconductance g V = 5 V, I = 3.0 A 40 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE pF Input Capacitance C 2240 ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 240 OSS V = 15 V DS Reverse Transfer Capacitance C 210 RSS Total Gate Charge Q 28 nC G(TOT) Threshold Gate Charge Q 1.0 G(TH) V = 4.5 V, V = 15 V GS DS I = 4.0 A D Gate-to-Source Charge Q 2.9 GS Gate-to-Drain Charge Q 8.8 GD SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time t 8.6 ns d(ON) Rise Time t 15 r V = 4.5 V, V = 15 V, GS DD I = 4.0 A, R = 1 Turn-Off Delay Time t D G 150 d(OFF) Fall Time t 88 f DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.63 1.0 V SD J V = 0 V, GS I = 1.0 A S T = 125C 0.50 J ns Reverse Recovery Time t 26.1 RR Charge Time t 10.2 a V = 0 V, dIs/dt = 100 A/ s, GS I = 1.0 A S Discharge Time t 15.9 b Reverse Recovery Charge Q 12 nC RR 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.