NTMFS10N3D2C MOSFET Power Trench, NChannel, Shielded Gate 100 V, 151 A, 3.2 m General Description www.onsemi.com This N-Channel MV MOSFET is produced using ON Semiconductors advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to V R MAX I MAX minimize on-state resistance and yet maintain superior switching DS DS(ON) D performance with best in class soft body diode. 100 V 3.2 m 10 V 151 A 9 m 6 V Features Shielded Gate MOSFET Technology S (1, 2, 3) Max r = 3.2 m at V = 10 V, I = 67 A DS(on) GS D Max r = 9 m at V = 6 V, I = 33 A DS(on) GS D 50% Lower Qrr than Other MOSFET Suppliers G (4) Lowers Switching Noise/EMI MSL1 Robust Package Design 100% UIL Tested These Devices are PbFree and are RoHS Compliant D (5, 6, 7, 8) N-CHANNEL MOSFET Applications Primary DCDC MOSFET Pin 1 Synchronous Rectifier in DCDC and ACDC Motor Drive Solar Top Bottom MAXIMUM RATINGS (T = 25C unless otherwise noted) A Power 56 Symbol Parameter Value Unit (PQFN8) CASE 483AF V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS MARKING DIAGRAM I Drain Current: A D Continuous, T = 25C (Note 5) 151 C S D Continuous, T = 100C (Note 5) 95 C Continuous, T = 25C (Note 1a) 21 A S Y&Z&3&K D Pulsed (Note 4) 775 NTMFS S D 10N3D2C E Single Pulse Avalanche Energy 486 mJ AS (Note 3) G D P Power Dissipation: W D Y = ON Semiconductor Logo T = 25C 138 C T = 25C (Note 1a) 2.7 &Z = Assembly Plant Code A &3 = Numeric Date Code T , T Operating and Storage Junction 55 to +150 C J STG &K = Lot Code Temperature Range NTMFS10N3D2C = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2019 Rev. 2 NTMFS10N3D2C/DNTMFS10N3D2C THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case 0.9 C/W JC R Thermal Resistance, Junction to Ambient (Note 1a) 45 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 100 V DSS D GS BV Breakdown Voltage Temperature I = 250 A, referenced to 25C 73 mV/C DSS D Coefficient / T J I Zero Gate Voltage Drain Current V = 80 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 370 A 2.0 3.2 4.0 V GS(th) GS DS D V Gate to Source Threshold Voltage I = 370 A, referenced to 25C 8 mV/C GS(th) D / T Temperature Coefficient J r Static Drain to Source On Resistance V = 10 V, I = 67 A 2.4 3.2 m DS(on) GS D V = 6 V, I = 33 A 3.8 9 GS D V = 10 V, I = 67 A, T = 125C 4.0 5.4 GS D J g Forward Transconductance V = 5 V, I = 67 A 144 S FS DS D DYNAMIC CHARACTERISTICS V = 50 V, V = 0 V, f = 1 MHz C Input Capacitance 4439 7460 pF iss DS GS C Output Capacitance 2663 4475 pF oss C Reverse Transfer Capacitance 24 65 pF rss R Gate Resistance 0.1 0.8 1.6 g SWITCHING CHARACTERISTICS t Turn-On Delay Time V = 50 V, I = 67 A, V = 10 V, 24 39 ns d(on) DD D GS R = 6 GEN t Rise Time 12 22 ns r t Turn-Off Delay Time 30 48 ns d(off) t Fall Time 7 14 ns f Q Total Gate Charge V = 0 V to 10 V, V = 50 V, 60 100 nC g GS DD I = 67 A D V = 0 V to 6 V, V = 50 V, 38 64 nC GS DD I = 67 A D Q Gate to Source Charge V = 50 V, I = 67 A 20 nC gs DD D Q Gate to Drain Miller Charge V = 50 V, I = 67 A 12 nC gd DD D Q Output Charge V = 50 V, V = 0 V 175 nC oss DD GS www.onsemi.com 2