NTMFS4835N MOSFET Power, Single, N-Channel, SO-8FL 30 V, 104 A Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V R MAX I MAX (BR)DSS DS(ON) D These are PbFree Devices 3.5 m 10 V 30 V 104 A Applications 5.0 m 4.5 V Refer to Application Note AND8195/D D (5,6) CPU Power Delivery DCDC Converters Low Side Switching G (4) MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit S (1,2,3) DraintoSource Voltage V 30 V DSS NCHANNEL MOSFET GatetoSource Voltage V 20 V GS MARKING Continuous Drain T = 25C I 20 A A D Current R JA DIAGRAM T = 85C 14 A (Note 1) D Power Dissipation T = 25C P 2.27 W A D R (Note 1) S D JA 4835N 1 S Continuous Drain T = 25C I 12 A A D AYWZZ S Current R JA SO8 FLAT LEAD Steady T = 85C 9.0 (Note 2) A G D CASE 488AA State D Power Dissipation T = 25C P 0.89 W A D STYLE 1 R (Note 2) JA A = Assembly Location Continuous Drain T = 25C I 104 A C D Y = Year Current R JC T = 85C 75 W = Work Week C (Note 1) ZZ = Lot Traceability Power Dissipation T = 25C P 62.5 W C D R (Note 1) JC Pulsed Drain T = 25C, I 208 A A DM Current t = 10 s p ORDERING INFORMATION Operating Junction and Storage T , 55 to C J Temperature T +150 STG Device Package Shipping Source Current (Body Diode) I 52 A S NTMFS4835NT1G SO8FL 1500 / Drain to Source DV/DT d /d 6 V/ns (PbFree) Tape & Reel V t Single Pulse DraintoSource Avalanche E 392 mJ AS NTMFS4835NT3G SO8FL 5000 / Energy T = 25C, V = 50 V, V = 10 V, J DD GS (PbFree) Tape & Reel I = 28 A , L = 1.0 mH, R = 25 L pk G For information on tape and reel specifications, Lead Temperature for Soldering Purposes T 260 C L including part orientation and tape sizes, please (1/8 from case for 10 s) refer to our Tape and Reel Packaging Specifications Stresses exceeding those listed in the Maximum Ratings table may damage the Brochure, BRD8011/D. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: May, 2019 Rev. 9 NTMFS4835N/DNTMFS4835N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 2.0 JC JunctiontoAmbient Steady State (Note 3) R 55.1 C/W JA JunctiontoAmbient Steady State (Note ) R 140.1 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 22.4 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 1.5 1.9 2.5 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.3 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V to I = 30 A 2.9 3.5 DS(on) GS D 11.5 V I = 15 A 2.5 D m V = 4.5 V I = 30 A 4.3 5.0 GS D I = 15 A 3.9 D Forward Transconductance g V = 15 V, I = 15 A 21 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1860 3100 4340 ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 12 V 402 670 938 pF OSS GS DS Reverse Transfer Capacitance C 216 360 504 RSS Total Gate Charge Q 22 39 G(TOT) Threshold Gate Charge Q 4.7 G(TH) V = 4.5 V, V = 15 V I = 30 A nC GS DS D GatetoSource Charge Q 8.3 GS GatetoDrain Charge Q 8.8 GD Total Gate Charge Q V = 11.5 V, V = 15 V 52 G(TOT) GS DS nC I = 30 A D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 16 d(ON) Rise Time t 31 r V = 4.5 V, V = 15 V, I = 15 A, GS DS D ns R = 3.0 G TurnOff Delay Time t 22 d(OFF) Fall Time t 13 f TurnOn Delay Time t 10 d(ON) Rise Time t 23 r V = 11.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 30 d(OFF) Fall Time t 10 f 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2