NTMFS4H013NF MOSFET Power, Single, N-Channel, SO-8FL 25 V, 269 A Features www.onsemi.com Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances V MAX R TYP Q GS DS(on) GTOT Optimized material for improved thermal performance 4.5 V 1.4 m 26 nC These Devices are PbFree, Halogen Free/BFR Free and are RoHS 10 V 0.9 m 56 nC Compliant Applications High Performance DC-DC Converters PIN CONNECTIONS System Voltage Rails SO8FL (5 x 6 mm) Netcom, Telecom Servers & Point of Load MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Units Drain-to-Source Voltage V 25 V DSS (Top View) (Bottom View) Gate-to-Source Voltage V 20 V GS Continuous Drain Current R I 43 A JA D (T = 25C, Note 1) NCHANNEL MOSFET A Power Dissipation R P 2.70 W JA D D (58) (T = 25C, Note 1) A Continuous Drain Current R I 269 A D JC (T = 25C, Note 1) C G P 104 W Power Dissipation R JC D (T = 25C, Note 1) C (4) Pulsed Drain Current (t = 10 s) I 505 A p DM S (1, 2, 3) Single Pulse Drain-to-Source Avalanche E 390 mJ AS Energy (Note 1) (I = 51 A , L = 0.3 mH) L pk Drain to Source dV/dt dV/dt 7 V/ns ORDERING INFORMATION Maximum Junction Temperature T 150 C J(max) See detailed ordering and shipping information on page 6 of this data sheet. Storage Temperature Range T 55 to C STG 150 Lead Temperature Soldering Reflow (SMD T 260 C SLD Styles Only), Pb-Free Versions (Note 2) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 2 1. Values based on copper area of 645 mm (or 1 in ) of 2 oz copper thickness and FR4 PCB substrate. 2. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3. This is the absolute maximum rating. Parts are 100% UIS tested at T = 25C, J V = 10 V, I = 33 A, E = 164 mJ. GS L AS Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2019 Rev. 1 NTMFS4H013NF/DNTMFS4H013NF THERMALCHARACTERISTICS Parameter Symbol Max Units Thermal Resistance, C/W Junction-to-Ambient (Note 1 and 4) R 40.0 JA Junction-to-Case (Note 1 and 4) R 1.5 JC 4. Thermal Resistance R and R as defined in JESD513. JA JC www.onsemi.com 2