Product Information

G1L9N06

G1L9N06 electronic component of Lite-On

MOSFET N Trench 60V 28A (Tc) 3V @ 250uA 9 mΩ @ 17A,10V DFN3x3 RoHS
Manufacturer: Lite-On
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.316 ea
Line Total: USD 0.32

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

G1L9N06
Lite-On

1 : USD 0.316
10 : USD 0.2625
30 : USD 0.2237
100 : USD 0.1916
500 : USD 0.1862
1000 : USD 0.1835

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
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Additional Infomation About Product

The G1L9N06 is a MOSFET N Trench 60V 28A (Tc) 3V @ 250uA 9 mO @ 17A, 10V chip manufactured by Lite-On. It features a small DFN3x3 (Dual Flat No Lead) package that is RoHS compliant, allowing it to be used in a wide range of applications. This device has a maximum drain-source breakdown voltage of 60V, a maximum Drain-Source ON Resistance (RDS(on)) of 9 mO, an IDS (Continuous Drain Current) of 28A, and a threshold voltage of 3V (at a gate current of 250uA). This device also has a maximum Drain-Source Volkssatz (VDSS) of 10V, making it ideal for switching applications with relatively low gate-drive requirements.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Lite-On may also be referenced as

LITE ON
LITEON
LITE-ON
Lite-On Electronics
Lite-On Inc
Lite-On Inc.
Liteon Opto
LITE-ON SEMICONDUCTOR CORP.
LTN

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