NTTFS4932N MOSFET Power, Single, N-Channel, 8FL 30 V, 79 A Features Low R to Minimize Conduction Losses NTTFS4932N 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit C/W JunctiontoCase (Drain) R 2.9 JC JunctiontoAmbient Steady State (Note 3) R 56.5 JA JunctiontoAmbient Steady State (Note 4) R 147.6 JA JunctiontoAmbient (t 10 s) (Note 3) R 27.5 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2 4. Surfacemounted on FR4 board using the minimum recommended pad size (40 mm , 1 oz. Cu). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 14 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 1.2 1.6 2.2 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temperature V /T 4.5 mV/C GS(TH) J Coefficient DraintoSource On Resistance R I = 20 A 2.5 4.0 m DS(on) D V = 10 V GS I = 10 A 2.5 D I = 20 A 3.6 5.5 D V = 4.5 V GS I = 10 A 3.6 D Forward Transconductance g V = 1.5 V, I = 15 A 46 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 3111 pF iss Output Capacitance C 1064 V = 0 V, f = 1.0 MHz, V = 15 V oss GS DS Reverse Transfer Capacitance C 42 rss Total Gate Charge Q 20 nC G(TOT) Threshold Gate Charge Q 4.9 G(TH) V = 4.5 V, V = 15 V, I = 20 A GS DS D GatetoSource Charge Q 8.9 GS GatetoDrain Charge Q 3.3 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 20 A 46.5 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 15.5 ns d(on) Rise Time t 22.6 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G TurnOff Delay Time t 29 d(off) Fall Time t 4.8 f 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.