X-On Electronics has gained recognition as a prominent supplier of NTRV4101PT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTRV4101PT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTRV4101PT1G ON Semiconductor

NTRV4101PT1G electronic component of ON Semiconductor
NTRV4101PT1G ON Semiconductor
NTRV4101PT1G MOSFETs
NTRV4101PT1G  Semiconductors

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See Product Specifications
Part No. NTRV4101PT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET PFET 20V 3.2A 85MO
Datasheet: NTRV4101PT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.694 ea
Line Total: USD 3.47 
Availability - 1222
Ship by Fri. 04 Jul to Wed. 09 Jul
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
5820
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.2586
6000 : USD 0.2487
9000 : USD 0.2475
12000 : USD 0.2463
27000 : USD 0.245
51000 : USD 0.2437

1258
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 648
Multiples : 1
648 : USD 0.4017
730 : USD 0.3562
733 : USD 0.3549
807 : USD 0.3224
824 : USD 0.3159
914 : USD 0.2847
1000 : USD 0.2613

1222
Ship by Fri. 04 Jul to Wed. 09 Jul
MOQ : 5
Multiples : 5
5 : USD 0.694
50 : USD 0.4185
150 : USD 0.3371
500 : USD 0.288
3000 : USD 0.1969
6000 : USD 0.1839

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the NTRV4101PT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTRV4101PT1G and other electronic components in the MOSFETs category and beyond.

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The NTRV4101PT1G is a MOSFET PFET from ON Semiconductor, manufactured in a small-signal surface mount package. This device features an industry-standard pinout and is rated for operation at 20 volts and 3.2 amperes. Its maximum power dissipation is rated at 85 milliohms, ensuring an accurate current regulation for any power applications. This device utilizes an N-channel but has the added benefit of an integrated gate-source protection feature, which prevents damage from overloads. One of the most appealing features of this device is its ability to withstand electromagnetic interference (EMI). The combination of its thermal, electrical and EMI properties make this device an attractive choice for many types of power circuits.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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