Product Information

NTS10100MFST1G

NTS10100MFST1G electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers LOW VF 10A 100V TRENCH S

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1500
Multiples : 1500

Stock Image

NTS10100MFST1G
ON Semiconductor

1500 : USD 0.2257
3000 : USD 0.2167
4500 : USD 0.2167
6000 : USD 0.2167
7500 : USD 0.2167
N/A

Obsolete
0 - WHS 2

MOQ : 1500
Multiples : 1500

Stock Image

NTS10100MFST1G
ON Semiconductor

1500 : USD 0.4452
3000 : USD 0.4331
6000 : USD 0.4211
9000 : USD 0.4091
12000 : USD 0.397
15000 : USD 0.385
150000 : USD 0.373
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

NTS10100MFST1G
ON Semiconductor

1 : USD 2.5114
10 : USD 0.9385
100 : USD 0.7032
500 : USD 0.581
1000 : USD 0.4588
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
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Brand
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NTS10100MFS, NRVTS10100MFS Very Low Forward Voltage Trench-based Schottky Rectifier NTS10100MFS, NRVTS10100MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 100 R Average Rectified Forward Current I 10 A F(AV) (Rated V , T = 137C) R C Peak Repetitive Forward Current, I 16 A FRM (Rated V , Square Wave, 20 kHz, T = 134C) R C NonRepetitive Peak Surge Current I 200 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +150 C stg Operating Junction Temperature T 55 to +150 C J Unclamped Inductive Switching Energy (10 mH Inductor, Nonrepetitive) E 100 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 2.0 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) v V F (i = 5 Amps, T = 25C) 0.512 F J (i = 10 Amps, T = 25C) 0.620 0.690 F J (i = 5 Amps, T = 125C) 0.450 F J (i = 10 Amps, T = 125C) 0.574 0.590 F J Instantaneous Reverse Current (Note 1) i R (V = 70 V, T = 25C) 7.0 A R J (Rated dc Voltage, T = 25C) 15 70 A J (V = 70 V, T = 125C) 4.0 mA R J (Rated dc Voltage, T = 125C) 10 35 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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