Product Information

NTS10120EMFST1G

NTS10120EMFST1G electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers LOW LEAKAGE 10A 120V TR

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 1500

Stock Image

NTS10120EMFST1G
ON Semiconductor

3000 : USD 0.4328
N/A

Obsolete
0 - WHS 2


Multiples : 1500

Stock Image

NTS10120EMFST1G
ON Semiconductor

N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

NTS10120EMFST1G
ON Semiconductor

1 : USD 3.0033
10 : USD 1.1327
100 : USD 0.8409
500 : USD 0.6949
1000 : USD 0.5478
1500 : USD 0.5136
N/A

Obsolete
0 - WHS 4

MOQ : 1500
Multiples : 1500

Stock Image

NTS10120EMFST1G
ON Semiconductor

1500 : USD 0.2696
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif

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NTS10120EMFS, NRVTS10120EMFS Very Low Leakage Trench-based Schottky Rectifier NTS10120EMFS, NRVTS10120EMFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 120 R Average Rectified Forward Current I 10 A F(AV) (Rated V , T = 165C) R C Peak Repetitive Forward Current, I 20 A FRM (Rated V , Square Wave, 20 kHz, T = 163C) R C NonRepetitive Peak Surge Current I 200 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +175 C J Unclamped Inductive Switching Energy (10 mH Inductor, Nonrepetitive) E 100 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 1.8 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Rating Symbol Typ Max Unit Instantaneous Forward Voltage (Note 1) V V F (I = 5 A, T = 25C) 0.6 F J (I = 10 A, T = 25C) 0.735 0.82 F J (I = 5 A, T = 125C) 0.515 F J (I = 10 A, T = 125C) 0.588 0.63 F J Instantaneous Reverse Current (Note 1) I R (V = 90 V, T = 25C) 1.0 A R J (Rated dc Voltage, T = 25C) 3.75 30 A J (V = 90 V, T = 125C) 2.0 mA R J (Rated dc Voltage, T = 125C) 3.1 20 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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