Product Information

NTS245SFT1G

Name: NTS245SFT1G
Brand: ON Semiconductor
SKU: NTS245SFT1G_ONSemiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

NTS245SFT1G electronic component of ON Semiconductor

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ON Semiconductor Schottky Diodes & Rectifiers 2A 45V LOW VF TRENCH REC

Manufacturer: ON Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.3457 ea
Line Total: USD 0.35

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 100 Multiples : 1 NTS245SFT1G ON Semiconductor	100 : USD 0.1755 500 : USD 0.1479 3000 : USD 0.139 9000 : USD 0.1349 24000 : USD 0.1137 45000 : USD 0.1089

0 - WHS 2 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 3000 Multiples : 3000 NTS245SFT1G ON Semiconductor	3000 : USD 0.1859

0 - WHS 3 Ships to you between Fri. 31 May to Wed. 05 Jun MOQ : 1 Multiples : 1 NTS245SFT1G ON Semiconductor	1 : USD 0.3457 10 : USD 0.2837 30 : USD 0.2571 100 : USD 0.2239 500 : USD 0.1995 1000 : USD 0.1907

0 - WHS 4 Ships to you between Thu. 30 May to Mon. 03 Jun MOQ : 1 Multiples : 1 NTS245SFT1G ON Semiconductor	1 : USD 1.015 10 : USD 0.8281 100 : USD 0.2265 500 : USD 0.1699 1000 : USD 0.1271 3000 : USD 0.109

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Additional Infomation About Product

NTS245SF Very Low Forward Voltage Trench-based Schottky Rectifier Features NTS245SF MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 45 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 2.0 A O (T = 125C) L Peak Repetitive Forward Current I 4.0 A FRM (Square Wave, 20 kHz, T = 120C) L NonRepetitive Peak Surge Current I 50 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) T , T 65 to +150 C stg J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 2) 23 C/W JCL Thermal Resistance, JunctiontoAmbient (Note 2) R 85 C/W JA Thermal Resistance, JunctiontoAmbient (Note 3) R 330 C/W JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit V V Maximum Instantaneous Forward Voltage (Note 4) F 0.63 (I = 2.0 A, T = 25C) F J 0.55 (I = 2.0 A, T = 125C) F J Maximum Instantaneous Reverse Current (Note 4) I R (Rated dc Voltage, T = 25C) 90 A J (Rated dc Voltage, T = 125C) 5 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2 2 2. Mounted with 700 mm copper pad size (Approximately 1 in ) 1 oz FR4 Board. 2 3. Mounted with pad size approximately 20 mm copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width 380 s, Duty Cycle 2.0%.

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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