Product Information

NTS12120MFST1G

NTS12120MFST1G electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers 12A 120V LOW VF TRENCH R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4601 ea
Line Total: USD 1.46

4 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1459 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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NTS12120MFST1G
ON Semiconductor

1 : USD 1.0108
10 : USD 0.8303
100 : USD 0.6647
500 : USD 0.5796
1000 : USD 0.4853
1500 : USD 0.4634
3000 : USD 0.4634
9000 : USD 0.445
24000 : USD 0.4336

     
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NTS12120MFS, NRVTS12120MFS Very Low Forward Voltage Trench-based Schottky Rectifier NTS12120MFS, NRVTS12120MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 120 R Average Rectified Forward Current I 12 A F(AV) (Rated V , T = 138C) R C Peak Repetitive Forward Current, I 24 A FRM (Rated V , Square Wave, 20 kHz, T = 136C) R C NonRepetitive Peak Surge Current I 200 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +150 C stg Operating Junction Temperature T 55 to +150 C J Unclamped Inductive Switching Energy (10 mH Inductor, Non repetitive) E 100 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 2.0 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Rating Symbol Typ Max Unit Instantaneous Forward Voltage (Note 1) V V F (I = 6 A, T = 25C) 0.587 F J (I = 12 A, T = 25C) 0.63 0.83 F J (I = 6 A, T = 125C) 0.510 F J (I = 12 A, T = 125C) 0.587 0.68 F J Instantaneous Reverse Current (Note 1) I R (V = 90 V, T = 25C) 3.4 A R J (Rated dc Voltage, T = 25C) 14.5 75 A J (V = 90 V, T = 125C) 3.5 mA R J (Rated dc Voltage, T = 125C) 9.2 40 mA J 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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