Product Information

NTS245SFT3G

NTS245SFT3G electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers 2A 45V LOW VF TRENCH REC

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.0988 ea
Line Total: USD 988

0 - Global Stock
MOQ: 10000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 10000
Multiples : 10000

Stock Image

NTS245SFT3G
ON Semiconductor

10000 : USD 0.0988

0 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

NTS245SFT3G
ON Semiconductor

1 : USD 1.015
10 : USD 0.82
100 : USD 0.2233
500 : USD 0.1678
1000 : USD 0.1122
2500 : USD 0.1079
10000 : USD 0.1015

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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NTS245SF Very Low Forward Voltage Trench-based Schottky Rectifier Features NTS245SF MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 45 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 2.0 A O (T = 125C) L Peak Repetitive Forward Current I 4.0 A FRM (Square Wave, 20 kHz, T = 120C) L NonRepetitive Peak Surge Current I 50 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) T , T 65 to +150 C stg J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 2) 23 C/W JCL Thermal Resistance, JunctiontoAmbient (Note 2) R 85 C/W JA Thermal Resistance, JunctiontoAmbient (Note 3) R 330 C/W JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit V V Maximum Instantaneous Forward Voltage (Note 4) F 0.63 (I = 2.0 A, T = 25C) F J 0.55 (I = 2.0 A, T = 125C) F J Maximum Instantaneous Reverse Current (Note 4) I R (Rated dc Voltage, T = 25C) 90 A J (Rated dc Voltage, T = 125C) 5 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2 2 2. Mounted with 700 mm copper pad size (Approximately 1 in ) 1 oz FR4 Board. 2 3. Mounted with pad size approximately 20 mm copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width 380 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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