NTSAF345, NRVTSAF345 Trench-based Schottky Rectifier Features Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage www.onsemi.com Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature TRENCH SCHOTTKY Higher Efficiency for Achieving Regulatory Compliance RECTIFIER High Surge Capability 3.0 AMPERE NRV Prefix for Automotive and Other Applications Requiring 45 VOLTS Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications SMAFL CASE 403AA Switching Power Supplies including Tablet Adapters, and Flat Panel STYLE 6 Display High Frequency and DCDC Converters MARKING DIAGRAM Freewheeling and ORing diodes Reverse Battery Protection 3AR Instrumentation AYWW Mechanical Characteristics: Case: Epoxy, Molded 3AR = Specific Device Code A = Assembly Location Epoxy Meets Flammability Rating UL 940 0.125 in. Y = Year Lead Finish: 100% Matte Sn (Tin) WW = Work Week Lead and Mounting Surface Temperature for Soldering Purposes: = PbFree Package 260C Max. for 10 Seconds Device Meets MSL 1 Requirements Weight: 95 mg (Approximately) ORDERING INFORMATION Device Package Shipping NTSAF345T3G SMAFL 5000 / Tape & (PbFree) Reel NRVTSAF345T3G SMAFL 5000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2016 Rev. 2 NTSAF345/DNTSAF345, NRVTSAF345 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 45 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (T = 112C) 3.0 L Peak Repetitive Forward Current I 6.0 A FRM (Rated V , Square Wave, 20 kHz) T = 103C R L NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 100 Storage Temperature Range T 65 to +150 C stg Operating Junction Temperature (Note 1) T 65 to +150 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 2) 25 C/W JCL Thermal Resistance, JunctiontoAmbient (Note 2) R 90 C/W JA 2. 1 inch square pad size (1 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Rating Symbol Typ Max Unit V V Instantaneous Forward Voltage (Note 3) F 0.482 0.63 (I = 3 A, T = 25C) F J 0.4 0.55 (I = 3 A, T = 125C) F J Instantaneous Reverse Current (Note 3) I R (Rated dc Voltage, T = 25C) 1.75 7.5 A J (Rated dc Voltage, T = 125C) 1.45 3 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 380 s, Duty Cycle 2.0%. www.onsemi.com 2