NTST30100CTG, NTSB30100CT-1G, NTSJ30100CTG, NTSB30100CTG Very Low Forward Voltage www.onsemi.com Trench-based Schottky PIN CONNECTIONS Rectifier 1 Exceptionally Low V = 0.455 V at I = 5 A F F 2, 4 3 Features Fine Lithography Trenchbased Schottky Technology for Very Low 4 4 Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance TO220AB I2PAK High Surge Capability CASE 221A CASE 418D 1 1 2 These are PbFree Devices 2 STYLE 6 STYLE 3 3 3 Typical Applications 4 Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display High Frequency and DCDC Converters Freewheeling and ORing diodes Reverse Battery Protection TO220FP D2PAK Instrumentation CASE 221AH CASE 418B 1 2 Mechanical Characteristics 3 Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 940 0.125 in ORDERING INFORMATION Finish: All External Surfaces Corrosion Resistant and Terminal See detailed ordering and shipping information in the package Leads are Readily Solderable dimensions section on page 5 of this data sheet. Lead Temperature for Soldering Purposes: 260C Maximum for 10 sec Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 7 NTST30100CT/DNTST30100CTG, NTSB30100CT1G, NTSJ30100CTG, NTSB30100CTG MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 115C) Per device 30 R C Per diode 15 Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz, T = 110C) Per device 60 R C Per diode 30 Nonrepetitive Peak Surge Current I 160 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature T 40 to +150 C J Storage Temperature T 40 to +150 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS NTST30100CTG, Rating Symbol NTSB30100CT1G NTSB30100CTG NTSJ30100CTG Unit Maximum Thermal Resistance per Diode JunctiontoCase R 2.5 1.14 4.09 C/W JC JunctiontoAmbient 70 46.6 105 C/W R JA ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 1) v V F (I = 5 A, T = 25C) 0.516 F J (I = 7.5 A, T = 25C) 0.576 F J (I = 15 A, T = 25C) 0.734 0.85 F J (I = 5 A, T = 125C) 0.455 F J (I = 7.5 A, T = 125C) 0.522 F J (I = 15 A, T = 125C) 0.627 0.68 F J Maximum Instantaneous Reverse Current (Note 1) I R (V = 70 V, T = 25C) 7.2 A R J (V = 70 V, T = 125C) 8.0 mA R J (Rated dc Voltage, T = 25C) 65 500 A J (Rated dc Voltage, T = 125C) 20 35 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% www.onsemi.com 2