NTSV20U100CT 20A, 100V Very Low Forward Voltage Trench- based Schottky Rectifier Exceptionally Low V = 0.485 V at I = 5 A F F www.onsemi.com Features PIN CONNECTIONS Fine Lithography Trenchbased Schottky Technology for Very Low 1 Forward Voltage and Low Leakage 2, 4 Fast Switching with Exceptional Temperature Stability 3 Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance 4 Low Thermal Resistance High Surge Capability These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant TO220AB Typical Applications CASE 221A STYLE 6 Switching Power Supplies including Notebook / Netbook Adapters, 1 2 3 ATX and Flat Panel Display High Frequency and DCDC Converters MARKING DIAGRAM Freewheeling and ORing diodes Reverse Battery Protection Instrumentation Mechanical Characteristics Case: Epoxy, Molded AY WW Epoxy Meets Flammability Rating UL 940 0.125 in TSV20U10CG AKA Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Maximum for 10 sec A = Assembly Location Y = Year WW = Work Week AKA = Polarity Designator G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 2 NTSV20U100CT/DNTSV20U100CT MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 115C) Per device 20 R C Per diode 10 Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz, T = 110C) Per device 40 R C Per diode 20 Nonrepetitive Peak Surge Current I 100 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature T 40 to +150 C J Storage Temperature T 40 to +150 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance JunctiontoCase R 2.0 C/W JC JunctiontoAmbient R 70 C/W JA ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 1) v V F (I = 5 A, T = 25C) 0.520 F J (I = 10 A, T = 25C) 0.658 0.98 F J (I = 5 A, T = 125C) 0.485 F J (I = 10 A, T = 125C) 0.593 0.82 F J Maximum Instantaneous Reverse Current (Note 1) I R (V = 70 V, T = 25C) 9.6 A R J (V = 70 V, T = 125C) 7.0 mA R J (Rated dc Voltage, T = 25C) 63.2 800 A J (Rated dc Voltage, T = 125C) 18.0 25 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% ORDERING INFORMATION Device Package Shipping NTSV20U100CTG TO220AB 50 Units / Rail (PbFree) www.onsemi.com 2