DB4J310K0R Panasonic

DB4J310K Silicon epitaxial planar type For high speed switching circuits Unit: mm Features Short reverse recovery time t rr Low forward voltage V F Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 4A Basic Part Number Dual DB2J310 (Parallel) Packaging DB4J310K0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Reverse voltage V 30 V R 1: Anode-1 3: Cathode-2 Repetitive peak reverse voltage V 30 V RRM 2: Anode-2 4: Cathode-1 Single 200 mA Panasonic SMini4-F3-B Forward current (Average) I F(AV) 1 * Double 150 mA JEITA SC-113BB Single 300 mA Code Peak forward current I FM 1 * Double 225 mA 2 * Non-repetitive peak forward surge current I 1 A 4 3 FSM Junction temperature T 125 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +125 C stg 1 2 Note) 1: Value of each diode in double diodes used. * 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current) * Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit V I = 5 mA 0.27 F1 F Forward voltage V I = 100 mA 0.40 V F2 F V I = 200 mA 0.47 F3 F I V = 10 V 20 R1 R Reverse current A I V = 30 V 200 R2 R Terminal capacitance C V = 10 V, f = 1 MHz 4.5 pF t R 1 * Reverse recovery time t I = I = 100 mA, I = 10 mA, R = 100 1.6 ns rr F R rr L Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz 1: t measurement circuit * rr Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 10 mA rr t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA Pulse Generator Wave Form Analyzer r R = 0.05 R = 100 (PG-10N) (SAS-8130) L R = 50 R = 50 s i Publication date: May 2013 Ver. EED 1DB4J310K DB4J310K I -V DB4J310K Ct-VR DB4J310K I -V R R F F I V I V C V F F R R t R 2 10 25 1 T = 125C a Pulse test 100C T = 25C a 3 10 85C 1 10 20 T = 125C a 4 10 25C 2 10 15 5 10 100C 6 10 3 10 10 85C 40C 7 10 25C 4 10 5 8 10 40C 9 5 10 0 10 0 10 20 30 40 0 5 10 15 20 25 30 0 0.1 0.2 0.3 0.4 0.5 Reverse voltage V (V) Reverse voltage V (V) Forward voltage V (V) R R F Ver. EED 2 Forward current I (A) F Reverse current I (A) R Terminal capacitance C (pF) t