NTTFS4823NTWG ON Semiconductor

NTTFS4823N Power MOSFET 30 V, 50 A, Single NChannel, 8FL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) NTTFS4823N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 3.8 C/W JC JunctiontoAmbient Steady State (Note 3) R 59.4 JA JunctiontoAmbient Steady State (Note 4) R 190.2 JA JunctiontoAmbient (t 10 s) (Note 3) R 31.1 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 4. Surface mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 25 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 1.9 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 6 mV/C GS(TH) J Coefficient DraintoSource On Resistance R I = 20 A 8.1 10.5 m DS(on) D V = 10 V to 11.5 V GS I = 10 A 8.0 D I = 20 A 13.5 17.5 D V = 4.5 V GS I = 10 A 13 D Forward Transconductance g V = 1.5 V, I = 20 A 34 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 750 1013 pF iss Output Capacitance C 175 237 V = 0 V, f = 1.0 MHz, V = 12 V oss GS DS Reverse Transfer Capacitance C 100 150 rss Total Gate Charge Q 6.5 9.0 nC G(TOT) Threshold Gate Charge Q 0.8 G(TH) V = 4.5 V, V = 15 V, I = 20 A GS DS D GatetoSource Charge Q 2.5 GS GatetoDrain Charge Q 2.9 GD Total Gate Charge Q V = 11.5 V, V = 15 V, I = 20 A 15 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 12 ns d(on) Rise Time t 22 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G Turn Off Delay Time t 14 d(off) Fall Time t 4 f 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.