Product Information

NTTFS4928NTAG

NTTFS4928NTAG electronic component of ON Semiconductor

Datasheet
N-Channel 30 V 7.3A (Ta), 37A (Tc) 810mW (Ta), 20.8W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1339 ea
Line Total: USD 0.1339

1 - Global Stock
Ships to you between
Tue. 10 Oct to Mon. 16 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock


Ships to you between Tue. 10 Oct to Mon. 16 Oct

MOQ : 1
Multiples : 1

Stock Image

NTTFS4928NTAG
ON Semiconductor

1 : USD 0.1339

3 - Global Stock


Ships to you between
Tue. 17 Oct to Fri. 20 Oct

MOQ : 1
Multiples : 1

Stock Image

NTTFS4928NTAG
ON Semiconductor

1 : USD 1.0826
10 : USD 1.0568
30 : USD 1.0416
100 : USD 1.0266

     
Manufacturer
ON Semiconductor
Product Category
MOSFET
RoHS - XON
Y Icon ROHS
Id - Continuous Drain Current
11.8 A
Vds - Drain-Source Breakdown Voltage
30 V
Rds On - Drain-Source Resistance
13.5 mOhms
Transistor Polarity
N - Channel
Vgs th - Gate-Source Threshold Voltage
2.2 V
Pd - Power Dissipation
2.12 W
Mounting Style
Smd/Smt
Package / Case
WDFN - 8
Packaging
Reel
Technology
Si
Number of Channels
1 Channel
Qg - Gate Charge
8 nC
Configuration
Single
Series
Nttfs4928n
Brand
On Semiconductor
Continuous Drain Current
11.8 A
Drain-Source Breakdown Voltage
30 V
Forward Transconductance - Min
40 S
Power Dissipation
2.12 W
Rds On
13.5 Mohms
Fall Time
4.4 ns
Gate Charge Qg
8 nC
Rise Time
25.5 ns
Factory Pack Quantity :
1500
Transistor Type
1 N - Channel
Cnhts
8541210000
Hts Code
8541290095
Mxhts
85412101
Product Type
Mosfet
Subcategory
Mosfets
Taric
8541210000
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NTTFS4928N MOSFET Power, Single, N-Channel, 8FL 30 V, 37 A Features NTTFS4928N MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit Single Pulse DraintoSource Avalanche Energy E 20 mJ AS (T = 25C, V = 50 V, V = 10 V, J DD GS I = 20 A , L = 0.1 mH, R = 25 ) L pk G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) 6 C/W R JC JunctiontoAmbient Steady State (Note 3) R 59.1 JA JunctiontoAmbient Steady State (Note 4) R 154.5 JA JunctiontoAmbient (t 10 s) (Note 3) R 32.4 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2 4. Surfacemounted on FR4 board using the minimum recommended pad size (40 mm , 1 oz. Cu). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 24 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.2 1.6 2.2 V GS(TH) GS DS D Negative Threshold Temperature V /T 3.7 mV/C GS(TH) J Coefficient DraintoSource On Resistance R I = 20 A 5.4 9.0 m DS(on) D V = 10 V GS I = 10 A 5.3 D I = 20 A 8.9 13.5 D V = 4.5 V GS I = 10 A 8.5 D Forward Transconductance g V = 1.5 V, I = 15 A 40 S FS DS D CHARGES AND CAPACITANCES pF Input Capacitance C 913 iss Output Capacitance C 366 V = 0 V, f = 1.0 MHz, V = 15 V oss GS DS Reverse Transfer Capacitance C 108 rss Total Gate Charge Q 8.0 nC G(TOT) Threshold Gate Charge Q 1.6 G(TH) V = 4.5 V, V = 15 V, I = 20 A GS DS D GatetoSource Charge Q 3.1 GS GatetoDrain Charge Q 3.1 GD 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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