NTTFS4C25NTAG ON Semiconductor

NTTFS4C25NTAG electronic component of ON Semiconductor
NTTFS4C25NTAG ON Semiconductor
NTTFS4C25NTAG MOSFETs
NTTFS4C25NTAG  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTTFS4C25NTAG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTTFS4C25NTAG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NTTFS4C25NTAG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET
Datasheet: NTTFS4C25NTAG Datasheet (PDF)
Price (USD)
1762: USD 0.2387 ea
Line Total: USD 420.59 
Availability : 0
  
QtyUnit Price
1762$ 0.2387

Availability 0
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.1257
4500$ 0.1207
7500$ 0.1207
22500$ 0.1207
37500$ 0.1207


Availability 0
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 1762
Multiples : 1762
QtyUnit Price
1762$ 0.2387


Availability 0
Ship by Mon. 18 Aug to Thu. 21 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.744
10$ 2.3877
30$ 2.1663
100$ 1.9371
500$ 1.778
1500$ 1.736


Availability 0
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.6829
10$ 0.7946
100$ 0.4319
500$ 0.3386
1000$ 0.262
1500$ 0.2382

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTTFS4C25NTAG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTTFS4C25NTAG and other electronic components in the MOSFETs category and beyond.

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NTTFS4C25N MOSFET Power, Single, N-Channel, 8FL 30 V, 27 A Features Low R to Minimize Conduction Losses DS(on) NTTFS4C25N 3. This is the absolute maximum rating. Parts are 100% tested at T = 25C, J V = 10 V, I = 11 Apk, E = 6 mJ. GS L AS THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 6.2 JC JunctiontoAmbient Steady State (Note 4) R 76.7 JA C/W JunctiontoAmbient Steady State (Note 5) R 210 JA JunctiontoAmbient (t 10 s) (Note 4) R 30.8 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 4.4 A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 15.3 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.5 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 10 A 13 17 DS(on) GS D m V = 4.5 V I = 9 A 21 26.5 GS D Forward Transconductance g V = 1.5 V, I = 15 A 23 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 500 ISS Output Capacitance C 295 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 85 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.170 RSS ISS GS DS Total Gate Charge Q 5.1 G(TOT) Threshold Gate Charge Q 0.9 G(TH) nC GatetoSource Charge Q 1.7 V = 4.5 V, V = 15 V I = 20 A GS GS DS D GatetoDrain Charge Q 2.7 GD Gate Plateau Voltage V 3.3 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 20 A 10.3 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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