NTUD3169CZ MOSFET Small Signal, Complementary, SOT-963, 1.0 x 1.0 mm 20 V, 220 mA / -200 mA www.onsemi.com Features V R Max I Max Complementary MOSFET Device (BR)DSS DS(on) D Offers a Low R Solution in the Ultra Small 1.0x1.0 mm DS(on) 1.5 4.5 V Package 2.0 2.5 V NChannel 1.5 V Gate Voltage Rating 0.22 A 3.0 1.8 V 20 V Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely 4.5 1.5 V Thin Environments such as Portable Electronics. 5.0 4.5 V This is a PbFree Device PChannel 6.0 2.5 V 0.2 A 20 V 7.0 1.8 V Applications 10 1.5 V Load Switch with Level Shift Optimized for Power Management in Ultra Portable Equipment PINOUT: SOT963 MAXIMUM RATINGS (T = 25C unless otherwise specified) J S 1 6 D Parameter Symbol Value Unit 1 1 DraintoSource Voltage V 20 V DSS GatetoSource Voltage V 8 V GS G 2 5 G 1 2 NChannel T = 25C 220 A Steady Continuous Drain State T = 85C 160 A Current (Note 1) D 3 4 S 2 2 t 5 s T = 25C 280 A I mA D PChannel T = 25C 200 A Steady Continuous Drain Top View State T = 85C 140 A Current (Note 1) t 5 s T = 25C 250 A MARKING Power Dissipation Steady 125 DIAGRAM (Note 1) State T = 25C P mW A D t 5 s 200 2 M SOT963 Pulsed Drain Current NChannel 800 1 CASE 527AD I mA t = 10 s p DM PChannel 600 2 = Specific Device Code Operating Junction and Storage Temperature T , 55 to C J M = Date Code T 150 STG Source Current (Body Diode) (Note 2) I 200 mA S ORDERING INFORMATION Lead Temperature for Soldering Purposes 260 C T L (1/8 from case for 10 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the NTUD3169CZT5G SOT963 8000 / device. If any of these limits are exceeded, device functionality should not be (PbFree) Tape & Reel assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using the minimum recommended pad size, For information on tape and reel specifications, 1 oz. Cu. including part orientation and tape sizes, please 2. Pulse Test: pulse width 300 s, duty cycle 2% refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: June, 2019 Rev. 1 NTUD3169CZ/DNTUD3169CZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State, Minimum Pad (Note 3) R 1000 C/W JA JunctiontoAmbient t 5 s (Note 3) 600 3. Surfacemounted on FR4 board using the minimum recommended pad size, 1 oz. Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol N/P Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage N I = 250 A 20 D V V = 0 V V (BR)DSS GS P I = 250 A 20 D Zero Gate Voltage Drain Current T = 25C 50 J N V = 0 V, V = 5.0 V GS DS T = 85C 200 J I nA DSS T = 25C 50 J P V = 0 V, V = 5.0 V GS DS T = 85C 200 J Zero Gate Voltage Drain Current N V = 0 V, V = 16 V 100 GS DS I T = 25C nA DSS J P V = 0 V, V = 16 V 100 GS DS GatetoSource Leakage Current N 100 I V = 0 V, V = 5.0 V nA GSS DS GS P 100 ON CHARACTERISTICS (Note 4) Gate Threshold Voltage N V = V I = 250 A 0.4 1.0 V GS DS D V GS(TH) P I = 250 A 0.4 1.0 D DraintoSource On Resistance N V = 4.5 V, I = 100 mA 0.75 1.5 GS D P V = 4.5V, I = 100 mA 2.0 5.0 GS D N V = 2.5 V, I = 50 mA 1.0 2.0 GS D P V = 2.5V, I = 50 mA 2.6 6.0 GS D N V = 1.8 V, I = 20 mA 1.4 3.0 GS D R DS(on) P V = 1.8V, I = 20 mA 3.4 7.0 GS D N V = 1.5 V, I = 10 mA 1.8 4.5 GS D P V = 1.5 V, I = 10 mA 4.0 10 GS D N V = 1.2 V, I = 1.0 mA 2.8 GS D P V = 1.2 V, I = 1.0 mA 6.0 GS D Forward Transconductance N V = 5.0 V, I = 125 mA 0.48 DS D g S FS P V = 5.0 V, I = 125 mA 0.35 DS D SourceDrain Diode Voltage V N V = 0 V, I = 10 mA T = 25C 0.6 1.0 V SD GS S J P V = 0 V, I = 10 mA 0.6 1.0 GS S CAPACITANCES Input Capacitance C 12.5 ISS f = 1 MHz, V = 0 V GS Output Capacitance C 3.6 N OSS V = 15 V DS Reverse Transfer Capacitance C 2.6 RSS pF Input Capacitance C 13.5 ISS f = 1 MHz, V = 0 V GS Output Capacitance C 3.8 P OSS V = 15 V DS Reverse Transfer Capacitance C 2.0 RSS 4. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2