Ships to you betweenThu. 30 May to Tue. 04 Jun
NTZD3154NT1G ON Semiconductor
Ships to you between Thu. 23 May to Wed. 29 May
ON Semiconductor MOSFET NFET SOT563 20V 540MA TR Stock : 0
ON Semiconductor MOSFET 20V 540mA Dual N-Channel wESD Stock : 6615
ON Semiconductor MOSFET COMP SOT563 20V 540MA TR Stock : 0
ON Semiconductor MOSFET PFET SOT563 20V 950MA TR Stock : 0
ON Semiconductor MOSFET COMP 540mA 20V Stock : 14234
MOSFET 20V 540mA/-430mA Complementary w/ESD Stock : 208000
MOSFET SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH Stock : 8000
MOSFET -20V -950mA P-Channel Stock : 5464
ON Semiconductor MOSFET 5V Dual Integrated Relay Inductive Load Stock : 0
MOSFET PFET SOT563 20V 430MA TR Stock : 0
Transistor: N-MOSFET; unipolar; 650V; 0.2A; 2.5W; TO252 Stock : 2000
Transistor: N-MOSFET; unipolar; 450V; 0.2A; 1.6W; SOT89-3 Stock : 14887
Transistor: N-MOSFET; unipolar; 450V; 0.2A; 740mW; TO92 Stock : 4179
Transistor: N-MOSFET; unipolar; 250V; 1.1A; DFN8 Stock : 23695
Transistor: N-MOSFET; unipolar; 300V; 0.2A; 1.6W; TO92 Stock : 1553
MOSFET N Trench 500V 350mA (Tj) 10 Ω @ 300mA,0V TO-252-2 (DPAK) RoHS Stock : 4000
ON Semiconductor MOSFET 60V T1 PCH DPAK Stock : 0
ON Semiconductor MOSFET NFET DPAK 60V 54A 17MOHM Stock : 518
The NTZD3154NT1G is a dual P-Channel MOSFET produced by ON Semiconductor. It is designed for power switching applications that require low on-resistance and low gate charges. This device has a breakdown voltage of -20 V and an on-resistance of 1.3 O. It also has a fast switching speed and an extended temperature range of -55°C to 175°C. This device has a low gate charge of 11 nC and is available in a lead-free SOT-23 package.