Product Information

NUP4102XV6T1G

NUP4102XV6T1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor TVS Diode Arrays MI ZNR QUAD ARRY

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

40: USD 0.1902 ea
Line Total: USD 7.61

149 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 40  Multiples: 1
Pack Size: 1
Availability Price Quantity
149 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

NUP4102XV6T1G
ON Semiconductor

1 : USD 0.1941
10 : USD 0.1902
25 : USD 0.1902
100 : USD 0.1902

149 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 40
Multiples : 1

Stock Image

NUP4102XV6T1G
ON Semiconductor

40 : USD 0.1902

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Capacitance
Dimensions
Brand
Channels
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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NUP4102XV6 6Pin BiDirectional Quad TVS Array This 6Pin bidirectional transient suppressor array is designed for applications requiring transient overvoltage protection capability. It is intended for use in transient voltage and ESD sensitive equipment NUP4102XV6 ELECTRICAL CHARACTERISTICS (T =25C, unless otherwise specified) J Parameter Conditions Symbol Min Typ Max Unit Reverse Working Voltage (Note 2) V 12 V RWM Breakdown Voltage I = 1 mA, (Note 3) V 13.6 17.8 V T BR Reverse Leakage Current V = 12 V I 10 100 nA RWM R Clamping Voltage I = 3 A, (8x20 sec V 25 V PP C Waveform) Maximum Peak Pulse Current 8x20 sec waveform I 3.0 A PP Capacitance V = 0 V, f=1 MHz C 13 15 pF R j (Line to GND) 2. TVS devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater than the DC RWM or continuous peak operating voltage level. 3. V is measured at pulse test current I Pulse Width 1 ms. BR T TYPICAL PERFORMANCE CURVES (T = 25C unless otherwise specified) J 110 110 WAVEFORM 100 100 PARAMETERS 90 90 t = 8 s r 80 80 t = 20 s d 70 70 ct 60 60 t = I /2 50 50 d PP 40 40 30 30 20 20 10 10 0 0 0 5 10 15 20 25 30 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (C) t, TIME ( s) A Figure 1. Pulse Waveform Figure 2. Power Derating Curve 14 24 t = 10 sec P 12 T = 25C A 22 10 20 8 18 6 16 4 14 2 0 12 0.1 1 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 I , SURGE CURRENT (A) V , REVERSE VOLTAGE (V) PP BR Figure 3. Clamping Voltage vs. Peak Pulse Figure 4. Junction Capacitance vs. Reverse Current (10 sec Square Wave Pulse) Voltage

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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