NTD4804N, NVD4804N MOSFET Power, Single, N-Channel, DPAK/IPAK 30 V, 117 A Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses V R MAX I MAX (BR)DSS DS(on) D Optimized Gate Charge to Minimize Switching Losses 4.0 m 10 V AEC Q101 Qualified NVD4804N 30 V 117 A These Devices are PbFree and are RoHS Compliant 5.5 m 4.5 V Applications D CPU Power Delivery DCDC Converters NChannel Low Side Switching G MAXIMUM RATINGS (T = 25C unless otherwise noted) J S Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS 4 GatetoSource Voltage V 20 V GS 4 Continuous Drain T = 25C I 19.6 A D A Current (R ) (Note 1) JA T = 85C 15.2 A 2 1 1 3 2 Power Dissipation T = 25C P 2.66 W A D 3 (R ) (Note 1) JA CASE 369AD CASE 369AA CASE 369D Continuous Drain I A T = 25C 14.5 3 IPAK D DPAK IPAK A Current (R ) (Note 2) JA (Straight Lead) (Bent Lead) (Straight Lead T = 85C 11 A Steady STYLE 2 DPAK) State Power Dissipation T = 25C P 1.43 W A D (R ) (Note 2) JA MARKING DIAGRAMS Continuous Drain I A T = 25C 124 C D & PIN ASSIGNMENTS Current (R ) 4 JC T = 85C 96 4 (Note 1) Drain C 4 Drain Drain Power Dissipation T = 25C P 107 W C D (R ) (Note 1) JC Pulsed Drain Current t =10 s T = 25C I 230 A p A DM Current Limited by Package T = 25C I 45 A A DmaxPkg Operating Junction and Storage Temperature T , T 55 to C J stg 2 175 Drain 1 3 1 2 3 Gate Source Source Current (Body Diode) I 78 A Gate Drain Source S 1 2 3 Gate Drain Source Drain to Source dV/dt dV/dt 6.0 V/ns A = Assembly Location Single Pulse DraintoSource Avalanche E 450 mJ AS Y = Year Energy (V = 24 V, V = 10 V, DD GS WW = Work Week L = 1.0 mH, I = 30 A, R = 25 ) L(pk) G 4804N = Device Code G = PbFree Package Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information in the package assumed, damage may occur and reliability may be affected. dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 10 NTD4804N/D AYWW 48 04NG AYWW 48 04NG AYWW 48 04NGNTD4804N, NVD4804N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 1.4 C/W JC JunctiontoTAB (Drain) R 3.5 JC TAB JunctiontoAmbient Steady State (Note 1) R 56.4 JA JunctiontoAmbient Steady State (Note 2) R 105 JA 1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 26 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 7.6 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 to 11.5 V I = 30 A 3.4 4.0 m DS(on) GS D I = 15 A 3.4 D V = 4.5 V I = 30 A 4.7 5.5 GS D I = 15 A 4.6 D Forward Transconductance gFS V = 15 V, I = 15 A 23 S DS D CHARGES AND CAPACITANCES Input Capacitance C 4490 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 952 oss V = 12 V DS Reverse Transfer Capacitance C 556 rss Total Gate Charge Q 30 40 nC G(TOT) Threshold Gate Charge Q 5.5 G(TH) V = 4.5 V, V = 15 V, GS DS I = 30 A D GatetoSource Charge Q 13 GS GatetoDrain Charge Q 13 GD Total Gate Charge Q V = 11.5 V, V = 15 V, 73 nC G(TOT) GS DS I = 30 A D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 18 ns d(on) Rise Time t 20 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G TurnOff Delay Time t 24 d(off) Fall Time t 8 f TurnOn Delay Time t 10 ns d(on) Rise Time t 19 r V = 11.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G TurnOff Delay Time t 35 d(off) Fall Time t 5 f 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2