Product Information

NVD5413NT4G

NVD5413NT4G electronic component of ON Semiconductor

Datasheet
Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) DPAK T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.061 ea
Line Total: USD 152.5

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 2500
Multiples : 2500

Stock Image

NVD5413NT4G
ON Semiconductor

2500 : USD 0.061

0 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 2500
Multiples : 2500

Stock Image

NVD5413NT4G
ON Semiconductor

2500 : USD 0.061

0 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1543
Multiples : 1543

Stock Image

NVD5413NT4G
ON Semiconductor

1543 : USD 0.061

     
Manufacturer
Product Category
Packaging
Channel Mode
Power Dissipation
Mounting
Operating Temp Range
Pin Count
Number Of Elements
Package Type
Operating Temperature Classification
Drain-Source On-Volt
Gate-Source Voltage Max
Rad Hardened
Continuous Drain Current
Polarity
Type
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NTD5413N Power MOSFET 30 Amps, 60 Volts Single NChannel DPAK Features Low R DS(on) NTD5413N ELECTRICAL CHARACTERISTICS (T = 25C Unless otherwise specified) J Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS DS D DraintoSource Breakdown Voltage Temper- V /T 67.5 mV/C (BR)DSS J ature Coefficient Zero Gate Voltage Drain Current I V = 0 V T = 25C 1.0 A DSS GS J V = 60 V DS T = 150C 50 J GateBody Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 2.0 3.4 4.0 V GS(th) GS DS D Negative Threshold Temperature Coefficient V /T 7.9 mV/C GS(th) J DraintoSource OnVoltage V V = 10 V, I = 20 A 0.37 0.52 V DS(on) GS D V = 10 V, I = 20 A, 150C 0.86 GS D DraintoSource OnResistance R V = 10 V, I = 20 A 18.5 26 m DS(on) GS D Forward Transconductance g V = 15 V, I = 20 A 36 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 25 V, V = 0 V, 1160 1725 pF iss DS GS f = 1 MHz Output Capacitance C 240 oss Transfer Capacitance C 100 rss Total Gate Charge Q V = 10 V, V = 48 V, 35 46 nC G(TOT) GS DS I = 20 A D Threshold Gate Charge Q 1.4 G(TH) GatetoSource Charge Q 6.5 GS GatetoDrain Charge Q 16.1 GD SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t V = 10 V, V = 48 V, 11 ns d(on) GS DD I = 20 A, R = 2.5 D G Rise Time t 20 r Turn Off Delay Time t 28 d(off) Fall Time t 8.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage (Note 2) V V = 0 V T = 25C 0.87 1.2 V SD GS J I = 20 A S T = 125C 0.8 J I = 20 A , V = 0 V , ns Reverse Recovery Time t 52 rr S dc GS dc dI /dt = 100 A/ s S Charge Time t 37 a Discharge Time t 15 b Reverse Recovery Stored Charge Q 105.7 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTD5413NT4G DPAK 2500 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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