Product Information

NVD5407NT4G

NVD5407NT4G electronic component of ON Semiconductor

Datasheet
MOSFET Single N-Channel Power MOSFET 40V, 38A, 26mO, Power MOSFET 40V, 38A, 26 mOhm, Single N-Channel, DPAK.

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

257: USD 0.4875 ea
Line Total: USD 125.29

2385 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 257  Multiples: 1
Pack Size: 1
Availability Price Quantity
2385 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 257
Multiples : 1

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NVD5407NT4G
ON Semiconductor

257 : USD 0.4875

     
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RoHS - XON
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NTD5407N, STD5407N, NVD5407N MOSFET Power, Single, N-Channel, DPAK 40 V, 38 A www.onsemi.com Features Low R DS(on) I MAX High Current Capability D V R TYP (Note 1) (BR)DSS DS(ON) Low Gate Charge 40 V 21 m 10 V 38 A STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable* NChannel 4 D These Devices are PbFree and are RoHS Compliant Applications 2 1 3 Electronic Brake Systems DPAK G Electronic Power Steering CASE 369C STYLE 2 Bridge Circuits S MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit MARKING DIAGRAM DraintoSource Voltage V 40 V DSS 1 AYWW GatetoSource Voltage V 20 V 54 GS 07NG Continuous Drain T = 25C I 38 A C D Steady Current R JC State T = 100C 27 C A = Assembly Location* Y = Year Power Dissipation Steady T = 25C P 75 W C D WW = Work Week R State JC 5407N = Specific Device Code Continuous Drain Steady T = 25C I 7.6 A G = PbFree Device A D Current R (Note 1) State JA T = 100C 5.3 A * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is Power Dissipation Steady T = 25C P 2.9 W A D stamped in the package, the front side assembly R (Note 1) State JA code may be blank. Pulsed Drain Current t = 10 s I 75 A p DM Operating Junction and Storage Temperature T , 55 to J C ORDERING INFORMATION T 175 STG Device Package Shipping Source Current (Body Diode) I 36 A S NTD5407NT4G DPAK 2500 / Tape & Single Pulse Drainto Source Avalanche EAS 150 mJ (PbFree) Reel Energy (V = 50 V, V = 10 V, I = 17 A, DD GS PK L = 1 mH, R = 25 ) STD5407NT4G* DPAK 2500 / Tape & G (PbFree) Reel Lead Temperature for Soldering Purposes 260 C T L (1/8 from case for 10 s) NVD5407NT4G* DPAK 2500 / Tape & (PbFree) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be For information on tape and reel specifications, assumed, damage may occur and reliability may be affected. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: June, 2019 Rev. 7 NTD5407N/DNTD5407N, STD5407N, NVD5407N THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Max Unit JunctiontoCase (Drain) R 2.0 C/W JC JunctiontoAmbient (Note 1) R 52 C/W JA 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in 2 oz including traces). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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