NVD5807NT4G ON Semiconductor

NVD5807NT4G electronic component of ON Semiconductor
NVD5807NT4G ON Semiconductor
NVD5807NT4G MOSFETs
NVD5807NT4G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of NVD5807NT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVD5807NT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.NVD5807NT4G
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:ON Semiconductor MOSFET POWER MOSFET
Datasheet:NVD5807NT4G Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.218
10$ 1.014
100$ 0.2976
1000$ 0.2652
2500$ 0.2436
10000$ 0.2436
25000$ 0.234
50000$ 0.2304
100000$ 0.2244
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVD5807NT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVD5807NT4G and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single NChannel, DPAK/IPAK Features Low R DS(on) High Current Capability www.onsemi.com Avalanche Energy Specified AECQ101 Qualified and PPAP Capable NVD5807N V R MAX I MAX (BR)DSS DS(on) D These Devices are PbFree and are RoHS Compliant 37 m 4.5 V 16 A 40 V Applications 31 m 10 V 23 A CCFL Backlight DC Motor Control D Class D Amplifier Power Supply Secondary Side Synchronous Rectification G MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit S DraintoSource Voltage V 40 V DSS NCHANNEL MOSFET GatetoSource Voltage Continuous V 20 V GS 4 4 GatetoSource Voltage V 30 V GS NonRepetitive (t < 10 S) p 2 1 Continuous Drain I A T = 25C 23 C D 3 Current (R ) JC 1 IPAK Steady T = 100C 16 (Note 1) C DPAK 2 State CASE 369D 3 CASE 369AA Power Dissipation T = 25C P 33 W C D (Straight Lead (Surface Mount) (R ) (Note 1) JC DPAK) STYLE 2 Pulsed Drain Current t = 10 s I 45 A p DM MARKING DIAGRAMS Operating Junction and Storage Temperature T , T 55 to C J stg 175 & PIN ASSIGNMENT 4 Source Current (Body Diode) I 23 A Drain S 4 Drain Single Pulse DraintoSource Avalanche E 29.4 mJ AS Energy (V = 50 V, V = 10 V, R = 25 , DD GS G I = 14 A, L = 0.3 mH, V = 40 V) L(pk) DS Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) 2 Stresses exceeding those listed in the Maximum Ratings table may damage the Drain device. If any of these limits are exceeded, device functionality should not be 1 3 Gate Source assumed, damage may occur and reliability may be affected. 1 2 3 Gate Drain Source THERMAL RESISTANCE MAXIMUM RATINGS A = Assembly Location* Parameter Symbol Value Unit Y = Year WW = Work Week JunctiontoCase (Drain) R 4.5 C/W JC 5807N = Device Code JunctiontoAmbient Steady State (Note 1) R 107 JA G = PbFree Package 1. Surfacemounted on FR4 board using the minimum recommended pad size. * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: April, 2017 Rev. 6 NTD5807N/D AYWW 58 07NG AYWW 58 07NG

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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