X-On Electronics has gained recognition as a prominent supplier of NVD5862NT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVD5862NT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVD5862NT4G ON Semiconductor

NVD5862NT4G electronic component of ON Semiconductor
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Part No.NVD5862NT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET 60V 98A 5.7MOHM
Datasheet: NVD5862NT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 3.0921
10 : USD 1.1352
100 : USD 0.9572
500 : USD 0.8881
1000 : USD 0.7889
2500 : USD 0.7767
5000 : USD 0.7767
10000 : USD 0.7466
25000 : USD 0.7176
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the NVD5862NT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVD5862NT4G and other electronic components in the MOSFETs category and beyond.

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NVD5862N Power MOSFET 60 V, 5.7 m , 98 A, Single NChannel Features Low R to Minimize Conduction Losses DS(on) High Current Capability www.onsemi.com Avalanche Energy Specified AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS V R I (BR)DSS DS(on) D Compliant 60 V 5.7 m 10 V 98 A MAXIMUM RATINGS (T = 25C unless otherwise noted) J D Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS NChannel G Continuous Drain Cur- T = 25C I 98 A C D rent R (Note 1) JC T = 100C 69 C Steady S State Power Dissipation R T = 25C P 115 W D JC C (Note 1) T = 100C 58 C 4 Continuous Drain Cur- T = 25C I 18 A A D rent R (Notes 1 & 2) JA T = 100C 13 A Steady 2 1 State Power Dissipation R T = 25C P 4.1 W JA A D 3 (Notes 1 & 2) T = 100C 2.0 A DPAK Pulsed Drain Current T = 25C, t = 10 s I 367 A CASE 369C A p DM (Surface Mount) Current Limited by T = 25C I 60 A A Dmaxpkg STYLE 2 Package (Note 3) Operating Junction and Storage Temperature T , T 55 to C J stg MARKING DIAGRAMS 175 & PIN ASSIGNMENT Source Current (Body Diode) I 96 A S 4 Drain Single Pulse DraintoSource Avalanche E 205 mJ AS Energy (T = 25C, V = 50 V, V = 10 V, J DD GS I = 37 A, L = 0.3 mH, R = 25 ) L(pk) G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the 2 Drain device. If any of these limits are exceeded, device functionality should not be 1 3 Gate Source assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS A = Assembly Location* Y = Year Parameter Symbol Value Unit WW = Work Week JunctiontoCase Steady State (Drain) R 1.3 C/W JC V5862N= Device Code G = PbFree Package JunctiontoAmbient Steady State (Note 2) R 37 JA 1. The entire application environment impacts the thermal resistance values shown, * The Assembly Location Code (A) is front side they are not constants and are only valid for the particular conditions noted. 2 optional. In cases where the Assembly Location is 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Continuous DC current rating. Maximum current for pulses as long as 1 stamped in the package bottom (molding ejecter second are higher but are dependent on pulse duration and duty cycle. pin), the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2017 Rev. 3 NVD5862N/D AYWW V58 62NGNVD5862N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 60 V V = 0 V, I = 250 A (BR)DSS GS D DraintoSource Breakdown Voltage V /T 47 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 9.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 48 A 4.4 5.7 m DS(on) GS D Forward Transconductance gFS V = 15 V, I = 10 A 18 S DS D CHARGES, CAPACITANCES AND GATE RESISTANCES pF Input Capacitance C 5050 6000 iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 500 600 oss V = 25 V DS Reverse Transfer Capacitance C 300 420 rss Total Gate Charge Q 82 nC G(TOT) Threshold Gate Charge Q 5.2 G(TH) V = 10 V, V = 48 V, GS DS I = 48 A D GatetoSource Charge Q 24 GS GatetoDrain Charge Q 27 GD Gate Resistance R 0.6 G SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 18 ns d(on) Rise Time t 70 r V = 10 V, V = 48 V, GS DD I = 48 A, R = 2.5 D G TurnOff Delay Time t 35 d(off) Fall Time t 60 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V T = 25C 0.9 1.2 SD J V = 0 V, GS I = 48 A S T = 100C 0.75 J Reverse Recovery Time t 38 ns RR Charge Time ta 20 V = 0 V, dIs/dt = 100 A/ s, GS I = 48 A S Discharge Time tb 18 Reverse Recovery Charge Q 40 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Order Number Package Shipping NVD5862NT4G DPAK 2500 / Tape & Reel (PbFree) NVD5862NT4GVF01 DPAK 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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