NVD6828NLT4G ON Semiconductor

NVD6828NLT4G electronic component of ON Semiconductor
NVD6828NLT4G ON Semiconductor
NVD6828NLT4G MOSFETs
NVD6828NLT4G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of NVD6828NLT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVD6828NLT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NVD6828NLT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Single N-Channel Power MOSFET 90V, 41A, 20mO Power MOSFET
Datasheet: NVD6828NLT4G Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.8862
10$ 1.0704
100$ 0.8589
500$ 0.7828
1000$ 0.6863
2500$ 0.6521
10000$ 0.6432
25000$ 0.6229
50000$ 0.6026
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVD6828NLT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVD6828NLT4G and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NVD6828NL MOSFET Power, Single N-Channel 90 V, 20 m , 41 A Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com High Current Capability Avalanche Energy Specified V R I (BR)DSS DS(on) D AECQ101 Qualified and PPAP Capable 20 m 10 V 90 V 41 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS 25 m 4.5 V Compliant D MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit NChannel DraintoSource Voltage V 90 V DSS G GatetoSource Voltage V 20 V GS Continuous Drain Cur- T = 25C I 41 A C D S rent R (Notes 1 & 3) JC T = 100C 29 4 C Steady State P W Power Dissipation R T = 25C 83 JC C D (Note 1) 2 1 T = 100C 42 C 3 Continuous Drain T = 25C I 8.7 A A D DPAK Current R (Notes 1, JA CASE 369C T = 100C 6.1 2 & 3) A Steady STYLE 2 State Power Dissipation R T = 25C P 3.8 W JA A D MARKING DIAGRAMS (Notes 1 & 2) T = 100C 1.9 A & PIN ASSIGNMENT 4 Pulsed Drain Current T = 25C, t = 10 s I 206 A DM A p Drain Operating Junction and Storage Temperature T , T 55 to C J stg 175 Source Current (Body Diode) I 40 A S Single Pulse DraintoSource Avalanche E 90 mJ AS Energy (T = 25C, V = 10 V, I = 24.5 A, J GS L(pk) 2 L = 0.3 mH, R = 25 ) Drain G 1 3 Gate Source Lead Temperature for Soldering Purposes T 260 C L A = Assembly Location* (1/8 from case for 10 s) Y = Year Stresses exceeding those listed in the Maximum Ratings table may damage the WW = Work Week device. If any of these limits are exceeded, device functionality should not be 6828L = Device Code assumed, damage may occur and reliability may be affected. G = PbFree Package THERMAL RESISTANCE MAXIMUM RATINGS * The Assembly Location Code (A) is front side Parameter Symbol Value Unit optional. In cases where the Assembly Location is JunctiontoCase Steady State (Drain) R 1.8 C/W stamped in the package bottom (molding ejecter JC pin), the front side assembly code may be blank. JunctiontoAmbient Steady State (Note 2) R 40 JA 1. The entire application environment impacts the thermal resistance values ORDERING INFORMATION shown, they are not constants and are only valid for the particular conditions Device Package Shipping noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. NVD6828NLT4G DPAK 2500/Tape & Reel 3. Continuous DC current rating. Maximum current for pulses as long as 1 (PbFree) second is higher but is dependent on pulse duration and duty cycle. DPAK 2500/Tape & Reel NVD6828NLT4G VF01 (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: June, 2019 Rev. 2 NVD6828NL/D AYWW 68 28LG

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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