Product Information

NVD3055L170T4G-VF01

NVD3055L170T4G-VF01 electronic component of ON Semiconductor

Datasheet
MOSFET NFET DPAK 60V 9A 1 70MOHM
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8442 ea
Line Total: USD 0.84

354 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
301 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

NVD3055L170T4G-VF01
ON Semiconductor

1 : USD 0.7916
10 : USD 0.6466
30 : USD 0.5741
100 : USD 0.5037
500 : USD 0.4593
1000 : USD 0.4371

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Hts Code
LoadingGif

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Additional Infomation About Product

The NVD3055L170T4G-VF01 is a MOSFET N-FET with DPAK package and is manufactured by ON Semiconductor. It is a miniMOS™ technology MOSFET which can be used as a switch or linear amplifier in various applications such as power supplies, motor controls and applied as the main switch, pre-load switch or load switch in DC/DC converters. This MOSFET can handle up to 9A continuous current and withstand a peak pulse current of up to 20A at a drain source voltage (VDS) of up to 60V. Its maximum on-state resistance (RDS(on)) is only 70mO. The NVD3055L170T4G-VF01 has integrated fast body and source diode with recovery time of 33ns, has an improved temperature and gate charge performance and has a thermal resistance of 2.5°C/W. With its low gate drive power consumption, this MOSFET is ideal for portable applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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