X-On Electronics has gained recognition as a prominent supplier of NVD5C454NT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVD5C454NT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVD5C454NT4G ON Semiconductor

NVD5C454NT4G electronic component of ON Semiconductor
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Part No.NVD5C454NT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET T6 40V DPAK EXP
Datasheet: NVD5C454NT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.3123 ea
Line Total: USD 3.31 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 1.1898

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 1.1916

0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 3.3123
10 : USD 1.2466
100 : USD 0.9285
500 : USD 0.7672
1000 : USD 0.6059
2500 : USD 0.5866

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVD5C454NT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVD5C454NT4G and other electronic components in the MOSFETs category and beyond.

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NVD5C454N MOSFET Power, Single N-Channel 40 V, 4.2 m , 83 A Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G AECQ101 Qualified and PPAP Capable V R I (BR)DSS DS(on) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 40 V 4.2 m 10 V 83 A Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J D Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS G Continuous Drain Cur- T = 25C I 82 A C D rent R (Notes 1 & 3) JC T = 100C 58 C Steady State S P W Power Dissipation R T = 25C 56 JC C D NCHANNEL MOSFET (Note 1) T = 100C 28 C Continuous Drain T = 25C I 19 A A D 4 Current R JA T = 100C 14 (Notes 1, 2 & 3) A Steady State 2 1 Power Dissipation R T = 25C P 3.1 W JA A D 3 (Notes 1 & 2) T = 100C 1.5 A DPAK Pulsed Drain Current T = 25C, t = 10 s I 446 A DM A p CASE 369C Operating Junction and Storage Temperature T , T 55 to C STYLE 2 J stg 175 Source Current (Body Diode) I 46 A S MARKING DIAGRAM Single Pulse DraintoSource Avalanche E 205 mJ AS & PIN ASSIGNMENT Energy (T = 25C, I = 8.3 A) J L(pk) 4 Lead Temperature for Soldering Purposes T 260 C Drain L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 THERMAL RESISTANCE MAXIMUM RATINGS Drain 1 3 Gate Source Parameter Symbol Value Unit JunctiontoCase (Drain) (Note 1) R 2.7 C/W A = Assembly Location JC Y = Year JunctiontoAmbient Steady State (Note 2) R 48.4 JA WW = Work Week 1. The entire application environment impacts the thermal resistance values shown, 5C454N= Device Code they are not constants and are only valid for the particular conditions noted. G = PbFree Package 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: June, 2019 Rev. 0 NVD5C454N/D AYWW 5C 454NGNVD5C454N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 15 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I A T = 25C 10 DSS J V = 0 V, GS V = 40 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 70 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 6.9 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 40 A 3.6 4.2 m DS(on) GS D Forward Transconductance g V = 3 V, I = 40 A 80 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCES pF Input Capacitance C 1900 iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 950 oss V = 25 V DS Reverse Transfer Capacitance C 48 rss nC Total Gate Charge Q 32 G(TOT) Threshold Gate Charge Q 5.7 G(TH) V = 10 V, V = 32 V, GS DS GatetoSource Charge Q 9.5 GS I = 40 A D GatetoDrain Charge Q 6.6 GD Plateau Voltage V 4.8 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 11 ns d(on) Rise Time t 47 r V = 10 V, V = 32 V, GS DS I = 40 A, R = 2.5 TurnOff Delay Time t D G 24 d(off) Fall Time t 8 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 V SD J V = 0 V, GS I = 40 A S T = 125C 0.8 J Reverse Recovery Time t 45 ns RR Charge Time ta 24 V = 0 V, dIs/dt = 100 A/ s, GS I = 40 A S Discharge Time tb 21 Reverse Recovery Charge Q 20 nC RR 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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