NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single NChannel, DPAK/IPAK Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses AECQ101 Qualified and PPAP Capable NVD4806N V R MAX I MAX (BR)DSS DS(on) D These Devices are PbFree and are RoHS Compliant 6.0 m 10 V 30 V 76 A Applications 9.4 m 4.5 V CPU Power Delivery DCDC Converters D Low Side Switching MAXIMUM RATINGS (T = 25C unless otherwise noted) J NChannel G Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS S GatetoSource Voltage V 20 V GS Continuous Drain I A T = 25C 15.6 4 A D Current (R ) (Note 1) JA T = 85C 12 A 4 Power Dissipation T = 25C P 2.65 W A D (R ) (Note 1) JA 2 1 1 2 3 3 Continuous Drain T = 25C I 11.3 A D A Current (R ) (Note 2) IPAK JA DPAK T = 85C 8.8 A Steady CASE 369AD CASE 369AA State Power Dissipation T = 25C P 1.4 W (Straight Lead) A D (Bent Lead) (R ) (Note 2) JA STYLE 2 STYLE 2 Continuous Drain T = 25C I 79 A D C Current (R ) MARKING DIAGRAMS JC T = 85C 61 (Note 1) C & PIN ASSIGNMENTS Power Dissipation T = 25C P 68 W C D 4 4 Drain (R ) (Note 1) JC Drain Pulsed Drain Current t =10 s T = 25C I 150 A A DM p Current Limited by Package T = 25C I 45 A A DmaxPkg Operating Junction and Storage Temperature T , T 55 to C J stg 175 2 Source Current (Body Diode) I 50 A Drain S 1 3 1 2 3 Gate Source Gate Drain Source Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse DraintoSource Avalanche E 220 mJ AS A = Assembly Location* Energy (V = 24 V, V = 10 V, DD GS Y = Year L = 1.0 mH, I = 21 A, R = 25 ) L(pk) G WW = Work Week Lead Temperature for Soldering Purposes T 260 C 4806N = Device Code L (1/8 from case for 10 s) G = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the * The Assembly Location Code (A) is front side device. If any of these limits are exceeded, device functionality should not be optional. In cases where the Assembly Location is assumed, damage may occur and reliability may be affected. stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: April, 2017 Rev. 11 NTD4806N/D AYWW 48 06NG AYWW 48 06NGNTD4806N, NVD4806N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 2.2 C/W JC JunctiontoTab (Drain) R 3.5 JC TAB JunctiontoAmbient Steady State (Note 1) R 56.7 JA JunctiontoAmbient Steady State (Note 2) R 106.8 JA 1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 27 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 6.0 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 to 11.5 V m I = 30 A 4.9 6.0 DS(on) GS D I = 15 A 4.8 D V = 4.5 V I = 30 A 7.9 9.4 GS D I = 15 A 7.5 D Forward Transconductance gFS V = 15 V, I = 15 A 14 S DS D CHARGES AND CAPACITANCES pF Input Capacitance C 2142 iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 480 oss V = 12 V DS Reverse Transfer Capacitance C 251 rss nC Total Gate Charge Q 15 23 G(TOT) Threshold Gate Charge Q 3.0 G(TH) V = 4.5 V, V = 15 V, GS DS I = 30 A D GatetoSource Charge Q 7.0 GS GatetoDrain Charge Q 7.0 GD Total Gate Charge Q V = 11.5 V, V = 15 V, 37 nC G(TOT) GS DS I = 30 A D SWITCHING CHARACTERISTICS (Note 4) ns TurnOn Delay Time t 13.9 d(on) Rise Time t 29.7 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 TurnOff Delay Time t D G 18.3 d(off) Fall Time t 7.8 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2