Product Information

NVD6495NLT4G-VF01

NVD6495NLT4G-VF01 electronic component of ON Semiconductor

Datasheet
MOSFET NFET DPAK 100V 23A 56MOHM

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3408 ea
Line Total: USD 1.34

1914 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1400 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

NVD6495NLT4G-VF01
ON Semiconductor

1 : USD 1.3408
10 : USD 1.1165
100 : USD 0.8887
500 : USD 0.7748
1000 : USD 0.649
2500 : USD 0.6194
5000 : USD 0.6194
10000 : USD 0.5956

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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MOSFET Power, N-Channel, Logic Level 100 V, 25 A, 50 m NVD6495NL Features Low R DS(on) NVD6495NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D V = 0 V, I = 250 A, T = 40C 92 GS D J DraintoSource Breakdown Voltage V /T 115 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 100 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V 1.0 2.0 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temperature V /T 4.8 mV/C GS(TH) J Coefficient DraintoSource OnResistance R V = 4.5 V, I = 10 A 44 54 m DS(on) GS D V = 10 V, I = 10 A 43 50 GS D Forward Transconductance g V = 5.0 V, I = 10 A 24 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1024 pF ISS Output Capacitance C V = 0 V, f = 1.0 MHz, V = 25 V 156 OSS GS DS Reverse Transfer Capacitance C 70 RSS nC Total Gate Charge Q 20 G(TOT) Threshold Gate Charge Q 1.1 G(TH) V = 4.5 V, V = 80 V, I = 23 A GS DS D GatetoSource Charge Q 3.1 GS GatetoDrain Charge Q 14 GD Total Gate Charge Q V = 10 V, V = 80 V, I = 23 A 35 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 11 ns d(on) Rise Time t 91 r V = 4.5 V, V = 80 V, GS DD I = 23 A, R = 6.1 TurnOff Delay Time t D G 40 d(off) Fall Time t 71 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.87 1.2 V SD J V = 0 V, I = 23 A GS S T = 125C 0.74 J Reverse Recovery Time t 64 ns RR Charge Time T 40 a V = 0 V, dI /dt = 100 A/ s, GS S I = 23 A S Discharge Time T 24 b Reverse Recovery Charge Q 152 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NVD6495NLT4G DPAK 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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