NTA4153N, NTE4153N, NVA4153N, NVE4153N MOSFET Single, N-Channel with ESD Protection, Small Signal, SC-75 and SC-89 NTA4153N, NTE4153N, NVA4153N, NVE4153N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 26 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 18.4 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, V = 16 V 100 nA DSS GS DS GatetoSource Leakage Current I V = 0 V, V = 4.5 V 1.0 A GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.45 0.76 1.1 V GS(TH) GS DS D Negative Threshold Temperature V /T 2.15 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 4.5 V, I = 600 mA 127 230 DS(on) GS D m V = 2.5 V, I = 500 mA 170 275 GS D V = 1.8 V, I = 350 mA 242 700 GS D V = 1.5 V, I = 40 mA 500 950 GS D Forward Transconductance g V = 10 V, I = 400 mA 1.4 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 110 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 16 OSS V = 16 V DS Reverse Transfer Capacitance C 12 RSS Total Gate Charge Q 1.82 nC G(TOT) Threshold Gate Charge Q 0.2 G(TH) V = 4.5 V, V = 10 V, GS DS I = 0.2 A D GatetoSource Charge Q 0.3 GS GatetoDrain Charge Q 0.42 GD SWITCHING CHARACTERISTICS (Note 3) ns TurnOn Delay Time t 3.7 d(ON) Rise Time t 4.4 r V = 4.5 V, V = 10 V, GS DD I = 0.2 A, R = 10 D G TurnOff Delay Time t 25 d(OFF) Fall Time t 7.6 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.67 1.1 V SD J V = 0 V, GS I = 200 mA S T = 125C 0.54 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.