NVDD5894NL Power MOSFET 40 V, 10 m , 64 A, Dual NChannel DPAK5L Features Low R to Minimize Conduction Losses DS(on) NVDD5894NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 1 A DSS J V = 0 V GS V = 40 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 50 A 8.3 10 m DS(on) GS D V = 4.5 V, I = 20 A 11.2 14.5 GS D Forward Transconductance g V = 15 V, I = 10 A 8.8 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 2103 pF iss V = 0 V, f = 1 MHz GS Output Capacitance C 259 oss V = 25 V DS Reverse Transfer Capacitance C 183 rss Total Gate Charge Q V = 4.5 V, V = 32 V, I = 20 A 21 nC G(TOT) GS DS D Q V = 10 V, V = 32 V, I = 20 A 41 G(TOT) GS DS D Threshold Gate Charge Q 1.7 nC G(TH) GatetoSource Charge Q 6.9 GS V = 10 V, V = 32 V, I = 20 A GS DS D GatetoDrain Charge Q 11.3 GD Plateau Voltage V 3.5 V GP SWITCHING CHARACTERISTICS TurnOn Delay Time t 12.4 ns d(on) Rise Time t 30.2 r V = 10 V, V = 32 V GS DS I = 20 A, R = 2.5 Turn Off Delay Time t 36 D G d(off) Fall Time t 54 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.88 1.0 V SD J V = 0 V GS I = 20 A S T = 125C 0.76 J Reverse Recovery Time t 22.8 ns RR Charge Time t 11.2 a V = 0 V, dI /dt = 100 A/ s GS s I = 20A Discharge Time t S 11.6 b Reverse Recovery Charge Q 13.7 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.