X-On Electronics has gained recognition as a prominent supplier of NVDD5894NLT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVDD5894NLT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVDD5894NLT4G ON Semiconductor

NVDD5894NLT4G electronic component of ON Semiconductor
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Part No.NVDD5894NLT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Dual N-Channel Power MOSFET 40V, 64A, 10mO Power MOSFET 40 V, 10 mohm, 64 A, Dual N-Channel DPAK-5L
Datasheet: NVDD5894NLT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.5985 ea
Line Total: USD 1.6 
Availability - 1381
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1381
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 1.5985
10 : USD 1.3685
100 : USD 1.1155
250 : USD 1.0235
500 : USD 0.9556
1000 : USD 0.8855
2500 : USD 0.8085
10000 : USD 0.7981

   
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We are delighted to provide the NVDD5894NLT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVDD5894NLT4G and other electronic components in the MOSFETs category and beyond.

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NVDD5894NL Power MOSFET 40 V, 10 m , 64 A, Dual NChannel DPAK5L Features Low R to Minimize Conduction Losses DS(on) NVDD5894NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 1 A DSS J V = 0 V GS V = 40 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 50 A 8.3 10 m DS(on) GS D V = 4.5 V, I = 20 A 11.2 14.5 GS D Forward Transconductance g V = 15 V, I = 10 A 8.8 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 2103 pF iss V = 0 V, f = 1 MHz GS Output Capacitance C 259 oss V = 25 V DS Reverse Transfer Capacitance C 183 rss Total Gate Charge Q V = 4.5 V, V = 32 V, I = 20 A 21 nC G(TOT) GS DS D Q V = 10 V, V = 32 V, I = 20 A 41 G(TOT) GS DS D Threshold Gate Charge Q 1.7 nC G(TH) GatetoSource Charge Q 6.9 GS V = 10 V, V = 32 V, I = 20 A GS DS D GatetoDrain Charge Q 11.3 GD Plateau Voltage V 3.5 V GP SWITCHING CHARACTERISTICS TurnOn Delay Time t 12.4 ns d(on) Rise Time t 30.2 r V = 10 V, V = 32 V GS DS I = 20 A, R = 2.5 Turn Off Delay Time t 36 D G d(off) Fall Time t 54 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.88 1.0 V SD J V = 0 V GS I = 20 A S T = 125C 0.76 J Reverse Recovery Time t 22.8 ns RR Charge Time t 11.2 a V = 0 V, dI /dt = 100 A/ s GS s I = 20A Discharge Time t S 11.6 b Reverse Recovery Charge Q 13.7 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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