NVMFD5853NLT1G ON Semiconductor

NVMFD5853NLT1G electronic component of ON Semiconductor
NVMFD5853NLT1G ON Semiconductor
NVMFD5853NLT1G MOSFETs
NVMFD5853NLT1G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of NVMFD5853NLT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVMFD5853NLT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.NVMFD5853NLT1G
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:ON Semiconductor MOSFET NFET SO8FL 40V 29A 10MOHM
Datasheet:NVMFD5853NLT1G Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9883
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Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.6701
25$ 1.8179
100$ 1.5797
500$ 1.3164
1000$ 1.1936
1500$ 1.1384
4500$ 1.1158
N/A

Obsolete

Availability0
MOQ : 618
Multiples : 618
QtyUnit Price
618$ 0.8865
N/A

Obsolete

Availability0
MOQ : 618
Multiples : 618
QtyUnit Price
618$ 0.8865
N/A

Obsolete
   
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We are delighted to provide the NVMFD5853NLT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMFD5853NLT1G and other electronic components in the MOSFETs category and beyond.

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NVMFD5853NL Power MOSFET 40 V, 10 m , 34 A, Dual NChannel Logic Level, Dual SO8FL Features Small Footprint (5x6 mm) for Compact Designs NVMFD5853NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 37.1 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A J DSS V = 0 V, GS V = 40 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.4 2.4 V GS(TH) GS DS D Negative Threshold Temperature V /T 5.9 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 15 A 8.4 10 m DS(on) GS D V = 4.5 V, I = 15 A 12.7 15 GS D Forward Transconductance g V = 5 V, I = 5 A 22 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1100 pF iss Output Capacitance C 152 V = 0 V, f = 1.0 MHz, V = 25 V oss GS DS Reverse Transfer Capacitance C 100 rss Total Gate Charge Q 12.8 nC G(TOT) Threshold Gate Charge Q 1.0 G(TH) V = 4.5 V, V = 32 V, GS DS I = 15 A D GatetoSource Charge Q 3.7 GS GatetoDrain Charge Q 7.0 GD Total Gate Charge Q V = 10 V, V = 32 V, I = 15 A 23 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 10 ns d(on) Rise Time t 53 r V = 4.5 V, V = 20 V, GS DS I = 15 A, R = 2.5 D G TurnOff Delay Time t 17 d(off) Fall Time t 30 f TurnOn Delay Time t 9.0 ns d(on) Rise Time t 23 r V = 10 V, V = 20 V, GS DS I = 15 A, R = 2.5 D G TurnOff Delay Time t 22 d(off) Fall Time t 4.3 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.84 1.1 V J SD V = 0 V, GS I = 20 A S T = 125C 0.69 J Reverse Recovery Time t 20 ns RR Charge Time t 12 a V = 0 V, d /d = 100 A/ s, GS IS t I = 15 A S Discharge Time t 8.1 b Reverse Recovery Charge Q 12.1 nC RR 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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