NVMFD5853N, NVMFD5853NWF MOSFET Dual N-Channel, Dual SO-8FL 40 V, 10 m , 53 A NVMFD5853N, NVMFD5853NWF ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 41.5 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 40 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 7.2 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 15 A 8.4 10 m DS(on) GS D Forward Transconductance g V = 5 V, I = 15 A 44 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1225 pF iss Output Capacitance C 150 V = 0 V, f = 1.0 MHz, V = 25 V oss GS DS Reverse Transfer Capacitance C 100 rss Total Gate Charge Q 24 nC G(TOT) Threshold Gate Charge Q 1.5 G(TH) V = 10 V, V = 32 V, GS DS GatetoSource Charge Q 5.2 GS I = 15 A D GatetoDrain Charge Q 6.6 GD Plateau Voltage V 4.1 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 9 ns d(on) Rise Time t 20 r V = 10 V, V = 20 V, GS DS I = 15 A, R = 2.5 D G TurnOff Delay Time t 21 d(off) Fall Time t 3 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V T = 25C 0.82 1.1 SD J V = 0 V, GS I = 15 A S T = 125C 0.72 J Reverse Recovery Time t 16 ns RR Charge Time t 10 a V = 0 V, d /d = 100 A/ s, GS IS t I = 15 A S Discharge Time t 6 b Reverse Recovery Charge Q 9 nC RR 4. Pulse Test: pulse width = 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures.