X-On Electronics has gained recognition as a prominent supplier of SUD70090E-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SUD70090E-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SUD70090E-GE3

SUD70090E-GE3 electronic component of Vishay
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See Product Specifications
Part No.SUD70090E-GE3
Manufacturer: Vishay
Category:MOSFET
Description: MOSFET 100V Vds 20V Vgs DPAK (TO-252)
Datasheet: SUD70090E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5742 ea
Line Total: USD 1.57

Availability - 1940
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1940 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 1.5902
10 : USD 1.3935
25 : USD 1.3796
50 : USD 1.3658
100 : USD 1.1703
250 : USD 1.1053
500 : USD 1.0235
1000 : USD 0.8882

     
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We proudly offer the SUD70090E-GE3 MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the SUD70090E-GE3 MOSFET.

SUD70090E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET c V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Maximum 175 C junction temperature 0.0089 at V = 10 V 50 GS 100 33 nC Q / Q ratio < 1 optimizes switching gd gs 0.0093 at V = 7.5 V 50 GS characteristics 100 % R and UIS tested g TOTO-252 Material categorization: for definitions of compliance please see Drain connected to tab www.vishay.com/doc 99912 APPLICATIONS D DC/DC converter Power tools Motor drive switch S D G DC/AC inverter G Top View Battery management Ordering Information: SUD70090E-GE3 (lead (Pb)-free and halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS c T = 25 C 50 C Continuous Drain Current (T = 150 C) I J D c T = 70 C 50 C A Pulsed Drain Current (t = 100 s) I 120 DM Avalanche Current I 40 AS a Single Avalanche Energy L = 0.1 mH E 80 mJ AS T = 25 C 125 C a Maximum Power Dissipation P W D b = 70 C 87.5 T C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT b Junction-to-Ambient (PCB Mount) R 40 thJA C/W Junction-to-Case (Drain) R 1.2 thJC Notes a. Duty cycle 1 %. b. When mounted on 1 square PCB (FR4 material). c. Package limited. S16-0163-Rev. A, 01-Feb-16 Document Number: 65437 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SUD70090E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - DS GS D V Gate Threshold Voltage V V = V , I = 250 A 2 - 4 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = 100 V, V = 0 V - - 1 DS GS A Zero Gate Voltage Drain Current I V = 100 V, V = 0 V, T = 125 C - - 150 DSS DS GS J V = 100 V, V = 0 V, T = 175 C - - 5 mA DS GS J a On-State Drain Current I V 10 V, V = 10 V 50 - - A D(on) DS GS V = 10 V, I = 20 A - 0.0074 0.0089 GS D a Drain-Source On-State Resistance R DS(on) V = 7.5 V, I = 15 A - 0.0077 0.0093 GS D a Forward Transconductance g V = 15 V, I = 10 A - 38 - S fs DS D b Dynamic Input Capacitance C - 1950 - iss Output Capacitance C V = 0 V, V = 50 V, f = 1 MHz - 845 - pF oss GS DS Reverse Transfer Capacitance C -54- rss c Total Gate Charge Q -33 50 g c Gate-Source Charge Q V = 50 V, V = 10 V, I = 20 A -8.8 - nC gs DS GS D c Gate-Drain Charge Q -7.5- gd Gate Resistance R f = 1 MHz 0.7 3.5 7 g c Turn-On Delay Time t -15 30 d(on) c Rise Time t -27 54 r V = 50 V, R = 5 DD L ns I 10 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -3672 d(off) c Fall Time t -45 90 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Pulsed Current (t = 100 s) I -- 120 A SM a Forward Voltage V I = 10 A, V = 0 V - 0.8 1.5 V SD F GS Reverse Recovery Time t - 77 116 ns rr Peak Reverse Recovery Charge I I = -10 A, dI/dt = 100 A/s -4.2 6.3 A RM(REC) F Reverse Recovery Charge Q - 145 365 nC rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0163-Rev. A, 01-Feb-16 Document Number: 65437 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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