X-On Electronics has gained recognition as a prominent supplier of NVMFS5833NT1G mosfet across the USA, India, Europe, Australia, and various other global locations. NVMFS5833NT1G mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

NVMFS5833NT1G ON Semiconductor

NVMFS5833NT1G electronic component of ON Semiconductor
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Part No.NVMFS5833NT1G
Manufacturer: ON Semiconductor
Category:MOSFET
Description: Trans MOSFET N-CH 40V 86A Automotive 5-Pin(4+Tab) SO-FL T/R
Datasheet: NVMFS5833NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 764
Multiples : 764
764 : USD 0.4868
N/A

Obsolete
0 - WHS 2

MOQ : 1500
Multiples : 1500
1500 : USD 0.5337
4500 : USD 0.517
N/A

Obsolete
0 - WHS 3

MOQ : 1500
Multiples : 1500
1500 : USD 0.9084
N/A

Obsolete
     
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We are delighted to provide the NVMFS5833NT1G from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMFS5833NT1G and other electronic components in the MOSFET category and beyond.

NVMFS5833N Power MOSFET 40 V, 7.5 m , 86 A, Single NChannel, SO8FL Features Low R DS(on) NVMFS5833N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 32.6 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 40 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 2.0 3.5 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 7.6 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 40 A 6.2 7.5 m DS(on) GS D Forward Transconductance g V = 5 V, I = 5 A 38 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1714 pF iss Output Capacitance C 210 V = 0 V, f = 1.0 MHz, V = 25 V oss GS DS Reverse Transfer Capacitance C 144 rss Total Gate Charge Q 32.5 nC G(TOT) Threshold Gate Charge Q 2.77 G(TH) V = 10 V, V = 32 V, GS DS I = 40 A D GatetoSource Charge Q 7.37 GS GatetoDrain Charge Q 9 GD SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 10.23 ns d(on) Rise Time t 19.5 r V = 10 V, V = 20 V, GS DS I = 40 A, R = 2.5 D G TurnOff Delay Time t 23.60 d(off) Fall Time t 3.00 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.85 1.2 V SD J V = 0 V, GS I = 40 A S T = 125C 0.7 J Reverse Recovery Time t 23.5 ns RR Charge Time t 13.5 a V = 0 V, d /d = 100 A/ s, GS IS t I = 40 A S Discharge Time t 10 b Reverse Recovery Charge Q 14 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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