NVMFS5833N Power MOSFET 40 V, 7.5 m , 86 A, Single NChannel, SO8FL Features Low R DS(on) NVMFS5833N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 32.6 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 40 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 2.0 3.5 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 7.6 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 40 A 6.2 7.5 m DS(on) GS D Forward Transconductance g V = 5 V, I = 5 A 38 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1714 pF iss Output Capacitance C 210 V = 0 V, f = 1.0 MHz, V = 25 V oss GS DS Reverse Transfer Capacitance C 144 rss Total Gate Charge Q 32.5 nC G(TOT) Threshold Gate Charge Q 2.77 G(TH) V = 10 V, V = 32 V, GS DS I = 40 A D GatetoSource Charge Q 7.37 GS GatetoDrain Charge Q 9 GD SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 10.23 ns d(on) Rise Time t 19.5 r V = 10 V, V = 20 V, GS DS I = 40 A, R = 2.5 D G TurnOff Delay Time t 23.60 d(off) Fall Time t 3.00 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.85 1.2 V SD J V = 0 V, GS I = 40 A S T = 125C 0.7 J Reverse Recovery Time t 23.5 ns RR Charge Time t 13.5 a V = 0 V, d /d = 100 A/ s, GS IS t I = 40 A S Discharge Time t 10 b Reverse Recovery Charge Q 14 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.