MOSFET Power, Single N-Channel 40 V, 0.67 m , 420 A NVMTS0D7N04C Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX Power 88 Package, Industry Standard (BR)DSS DS(ON) D AECQ101 Qualified and PPAP Capable 40 V 420 A 0.67 m 10 V Wettable Flank Plated Option for Enhanced Optical Inspection These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D (58) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS G (1) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 420 A D S (24) C Current R JC T = 100C 297 NCHANNEL MOSFET (Notes 1, 3) C Steady State Power Dissipation T = 25C P 205 W C D R (Note 1) JC T = 100C 103 C Continuous Drain T = 25C I 65 A A D Current R JA T = 100C 46 (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 4.9 W D A DFNW8 R (Notes 1, 2) JA T = 100C 2.5 A TX SUFFIX CASE 507AP Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM Operating Junction and Storage Temperature T , T 55 to C J stg Range + 175 MARKING DIAGRAM Source Current (Body Diode) I 171 A S Single Pulse DraintoSource Avalanche E 1446 mJ AS Energy (I = 40 A) L(pk) XXXXXXXX Lead Temperature for Soldering Purposes T 260 C L AWLYWW (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XXX = Device Code (8 AN characters max) THERMAL RESISTANCE MAXIMUM RATINGS A = Assembly Location Parameter Symbol Value Unit WL = 2digit Wafer Lot Code Y = Year Code JunctiontoCase Steady State R 0.73 C/W JC WW = Work Week Code JunctiontoAmbient Steady State (Note 2) R 30.4 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. ORDERING INFORMATION 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. See detailed ordering, marking and shipping information in the 3. Maximum current for pulses as long as 1 second is higher but is dependent package dimensions section on page 5 of this data sheet. on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2020 Rev. 4 NVMTS0D7N04C/DNVMTS0D7N04C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 20 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 40 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 8.5 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 0.57 0.67 m DS(on) GS D Forward Transconductance g V =5 V, I = 50 A 200 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 9281 ISS Output Capacitance C 5387 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 176 RSS Total Gate Charge Q V = 10 V, V = 20 V I = 50 A 140 G(TOT) GS DS D Threshold Gate Charge Q 22.7 G(TH) nC GatetoSource Charge Q 37 GS V = 10 V, V = 20 V I = 50 A GS DS D GatetoDrain Charge Q 28.3 GD Plateau Voltage V 4.28 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 28.9 d(ON) Rise Time t 18.1 r V = 10 V, V = 20 V, GS DS ns I = 50 A, R = 2.5 D G TurnOff Delay Time t 61.0 d(OFF) Fall Time t 20.4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.7 J Reverse Recovery Time t 88.9 RR Charge Time t 57.9 a ns V = 0 V, dIS/dt = 100 A/ s, GS I = 50 A S Discharge Time t 31 b Reverse Recovery Charge Q 191 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2