NVMS5P02R2G ON Semiconductor

NVMS5P02R2G electronic component of ON Semiconductor
NVMS5P02R2G ON Semiconductor
NVMS5P02R2G MOSFETs
NVMS5P02R2G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NVMS5P02R2G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVMS5P02R2G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NVMS5P02R2G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET PFET S08S 20V 5.4A 0.033R
Datasheet: NVMS5P02R2G Datasheet (PDF)
Price (USD)
1: USD 1.348 ea
Line Total: USD 1.35 
Availability : 47
  
Ship by Mon. 17 Nov to Fri. 21 Nov
QtyUnit Price
1$ 1.348
10$ 1.1042
30$ 0.7265
100$ 0.5518
500$ 0.506
1000$ 0.4863

Availability 47
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.348
10$ 1.1042
30$ 0.7265
100$ 0.5518
500$ 0.506
1000$ 0.4863

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the NVMS5P02R2G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMS5P02R2G and other electronic components in the MOSFETs category and beyond.

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NTMS5P02, NVMS5P02 MOSFET Power, Single, P-Channel, Enhancement Mode, SOIC-8 -5.4 A, -20 V NTMS5P02, NVMS5P02 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage V 20 V DSS DraintoGate Voltage (R = 1.0 m ) V 20 V GS DGR GatetoSource Voltage Continuous V 10 V GS Thermal Resistance JunctiontoAmbient (Note 1) R 50 C/W JA Total Power Dissipation T = 25C P 2.5 W A D Continuous Drain Current 25C 7.05 A I D Continuous Drain Current 70C I 5.62 A D Maximum Operating Power Dissipation P 1.2 W D Maximum Operating Drain Current I 4.85 A D Pulsed Drain Current (Note 4) I 28 A DM Thermal Resistance JunctiontoAmbient (Note 2) R 85 C/W JA Total Power Dissipation T = 25C P 1.47 W A D Continuous Drain Current 25C I 5.40 A D Continuous Drain Current 70C I 4.30 A D Maximum Operating Power Dissipation P 0.7 W D Maximum Operating Drain Current I 3.72 A D Pulsed Drain Current (Note 4) I 20 A DM Thermal Resistance JunctiontoAmbient (Note 3) R 159 C/W JA Total Power Dissipation T = 25C P 0.79 W A D Continuous Drain Current 25C I 3.95 A D Continuous Drain Current 70C I 3.15 A D Maximum Operating Power Dissipation P 0.38 W D Maximum Operating Drain Current I 2.75 A D Pulsed Drain Current (Note 4) 12 A I DM Operating and Storage Temperature Range T , T 55 to +150 C J stg Single Pulse DraintoSource Avalanche Energy Starting T = 25C E 360 mJ J AS (V = 20 Vdc, V = 5.0 Vdc, Peak I = 8.5 Apk, L = 10 mH, R = 25 ) DD GS L G Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted onto a 2 square FR4 Board (1 sq. 2 oz Cu 0.06 thick single sided), t 10 seconds. 2. Mounted onto a 2 square FR4 Board (1 sq. 2 oz Cu 0.06 thick single sided), t = steady state. 3. Minimum FR4 or G10 PCB, t = Steady State. 4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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