NVMYS025N06CL MOSFET Power, Single N-Channel 60 V, 27.5 m , 21 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D LFPAK4 Package, Industry Standard 27.5 m 10 V AECQ101 Qualified and PPAP Capable 60 V 21 A These Devices are PbFree and are RoHS Compliant 43 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J D (5) Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 21 A G (4) C D Current R State JC T = 100C 12 (Notes 1, 2, 3) C S (1,2,3) Power Dissipation T = 25C P 24 W C D R (Notes 1, 2) JC NCHANNEL MOSFET T = 100C 7.6 C Continuous Drain Steady T = 25C I 8.5 A A D State Current R JA T = 100C 6.0 MARKING (Notes 1, 2, 3) A DIAGRAM Power Dissipation T = 25C P 3.8 W A D R (Notes 1, 2) JA T = 100C 1.9 A Pulsed Drain Current T = 25C, t = 10 s I 103 A 025N06 A p DM CL Operating Junction and Storage Temperature T , T 55 to C J stg LFPAK4 AWLYW Range + 175 CASE 760AB Source Current (Body Diode) I 20 A S Single Pulse DraintoSource Avalanche E 44.6 mJ AS 025N06CL = Specific Device Code Energy (I = 1.5 A) L(pk) A = Assembly Location Lead Temperature for Soldering Purposes T 260 C WL = Wafer Lot L (1/8 from case for 10 s) Y = Year W = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS ORDERING INFORMATION See detailed ordering, marking and shipping information on Parameter Symbol Value Unit page 5 of this data sheet. JunctiontoCase Steady State 6.0 C/W R JC JunctiontoAmbient Steady State (Note 2) R 39.5 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: July, 2019 Rev. 0 NVMYS025N06CL/DNVMYS025N06CL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 A DSS GS J V = 60 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 13 A 1.2 2.0 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V I = 7.5 A 22.9 27.5 m DS(on) GS D V = 4.5 V I = 7.5 A 35.8 43 GS D Forward Transconductance g V = 15 V, I = 10 A 20 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 330 pF ISS Output Capacitance C 172 V = 0 V, f = 1 MHz, V = 25 V OSS GS DS Reverse Transfer Capacitance C 5 RSS Total Gate Charge Q 5.8 nC G(TOT) Threshold Gate Charge Q 0.8 G(TH) V = 10 V, V = 48 V I = 7.5 A GS DS D GatetoSource Charge Q 1.3 GS GatetoDrain Charge Q 0.6 GD Total Gate Charge Q V = 4.5 V, V = 48 V I = 7.5 A 2.7 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 5 ns d(ON) Rise Time t 12.5 r V = 10 V, V = 48 V, GS DS I = 7.5 A, R = 1.0 D G TurnOff Delay Time t 14 d(OFF) Fall Time t 2.5 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.87 1.2 V SD J V = 0 V, GS I = 7.5 A S T = 125C 0.76 J Reverse Recovery Time t 18 ns RR Charge Time t 8.3 a V = 0 V, dIS/dt = 20 A/ s, GS I = 7.5 A S Discharge Time t 9.7 b Reverse Recovery Charge Q 7.5 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2