X-On Electronics has gained recognition as a prominent supplier of NXH160T120L2Q1SG IGBT Modules across the USA, India, Europe, Australia, and various other global locations. NXH160T120L2Q1SG IGBT Modules are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

NXH160T120L2Q1SG ON Semiconductor

NXH160T120L2Q1SG electronic component of ON Semiconductor
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See Product Specifications
Part No.NXH160T120L2Q1SG
Manufacturer: ON Semiconductor
Category: IGBT Modules
Description: IGBT Modules Power Integrated Module PIM IGBT 1200 V 160 A and 650 V 100 A Solder pins
Datasheet: NXH160T120L2Q1SG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 88.2395 ea
Line Total: USD 88.24 
Availability - 20
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
20
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 88.2395
10 : USD 87.1125
21 : USD 83.743
105 : USD 83.145
252 : USD 83.099
504 : USD 83.076
1008 : USD 83.053
2520 : USD 82.938

   
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We are delighted to provide the NXH160T120L2Q1SG from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NXH160T120L2Q1SG and other electronic components in the IGBT Modules category and beyond.

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NXH160T120L2Q1PG, NXH160T120L2Q1SG Q1PACK Module This high density, integrated power module combines highperformance IGBTs with rugged antiparallel diodes. Features www.onsemi.com Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation PACKAGE PICTURE Module Design Offers High Power Density Low Inductive Layout Q1PACK Package with PressFit and Solder Pins Typical Applications Solar Inverters Uninterruptable Power Supplies Q1PACK Q1PACK CASE 180AD CASE 180AQ PRESS FIT SOLDER PINS DEVICE MARKING NXH160T120L2Q1xG ATYYWW SCHEMATIC 17,18,19,20 D5 x = P or S G = PbFree Package T1 D1 AT = Assembly & Test Site Code 21 YYWW = Year and Work Week Code 22 D2 D6 15,16 23,24,25,26 PIN ASSIGNMENTS 10 9 T2 T3 14 13 D7 7,8 27,28,29,30 D3 D8 T4 D4 1 11 12 NTC 2 3,4,5,6 ORDERING INFORMATION See detailed ordering and shipping information on page 14 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: June, 2018 Rev. 2 NXH160T120L2Q1/DNXH160T120L2Q1PG, NXH160T120L2Q1SG Table 1. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit HALFBRIDGE IGBT INVERSE DIODE (D1, D4) Peak Repetitive Reverse Voltage V 1200 V RRM Forward Current, DC T = 80C I 20 A h F Repetitive Peak Forward Current I 80 A FRM T limited by T pulse jmax Power Dissipation per Diode P 51 W tot T = T T = 80C j jmax h Maximum Junction Temperature T 150 C J HALFBRIDGE IGBT (T1, T4) Collectoremitter voltage V 1200 V CES Collector current T = 80C I 140 A h C Pulsed Collector Current, T Limited by T I 480 A pulse jmax CM Power Dissipation per IGBT P 280 W tot T = T T = 80C j jmax h Gateemitter voltage V 20 V GE Short Circuit Withstand Time T 10 s SC V = 15 V, V = 600 V, T 150C GE CE J Maximum Junction Temperature T 150 C J NP DIODE (D6, D7) Peak Repetitive Reverse Voltage V 650 V RRM Forward Current, DC T = 80C I 58 A h F Repetitive Peak Forward Current, T limited by T I 200 A pulse Jmax FRM Power Dissipation Per Diode P 89 W tot T = T T = 80C j jmax h Maximum Junction Temperature T 150 C J NP IGBT (T2, T3) Collectoremitter voltage V 650 V CES Collector current T = 80C I 83 A h C Pulsed collector current, T limited by T I 235 A pulse Jmax CM Power Dissipation Per IGBT P 117 W tot T = T T = 80C j jmax h Gateemitter voltage V 20 V GE Short Circuit Withstand Time T 5 s sc V = 15 V, V = 400 V, T 150C GE CE J Maximum Junction Temperature T 150 C J NP INVERSE DIODE (D2, D3) Peak Repetitive Reverse Voltage V 650 V RRM Forward Current, DC T = 80C I 17 A h F Repetitive Peak Forward Current, T limited by T I 68 A pulse Jmax FRM Power Dissipation Per Diode P 28 W tot T = T T = 80C j jmax h Maximum Junction Temperature T 150 C J HALFBRIDGE DIODE (D5, D8) Peak Repetitive Reverse Voltage V 1200 V RRM Forward Current, DC T = 80C (per diode) I 45 A h F Repetitive Peak Forward Current, T limited by T I 180 A pulse Jmax FRM Power Dissipation Per Diode P 78 W tot T = T T = 80C j jmax h www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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