NZQA5V6AXV5T1G ON Semiconductor

NZQA5V6AXV5T1G electronic component of ON Semiconductor
NZQA5V6AXV5T1G ON Semiconductor
NZQA5V6AXV5T1G ESD Protection Diodes / TVS Diodes
NZQA5V6AXV5T1G  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NZQA5V6AXV5T1G ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. NZQA5V6AXV5T1G ESD Protection Diodes / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No. NZQA5V6AXV5T1G
Manufacturer: ON Semiconductor
Category: ESD Protection Diodes / TVS Diodes
Description: ESD Suppressors / TVS Diodes Low Cap. TVS Quad Array for ESD
Datasheet: NZQA5V6AXV5T1G Datasheet (PDF)
Price (USD)
4000: USD 0.1286 ea
Line Total: USD 514.4 
Availability : 3880
  
Ship by Mon. 17 Nov to Fri. 21 Nov
QtyUnit Price
4000$ 0.1286

Availability 3880
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 4000
Multiples : 4000
QtyUnit Price
4000$ 0.1286


Availability 18850
Ship by Thu. 13 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.325
10$ 0.2362
100$ 0.1848
500$ 0.1562
1000$ 0.1419
4000$ 0.1353


Availability 160
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.4666
50$ 0.3702
150$ 0.2221
500$ 0.1871
2500$ 0.1717
4000$ 0.1624

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Polarity
Termination Style
Breakdown Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Capacitance
Dimensions
Brand
Channels
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NZQA5V6AXV5T1G from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NZQA5V6AXV5T1G and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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NZQA5V6AXV5 Series ESD Protection Diode Low Clamping Voltage This integrated surge protection device is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers, business machines, www.onsemi.com communication systems, medical equipment, and other applications. Its integrated design provides very effective and reliable protection for 1 5 four separate lines using only one package. These devices are ideal for situations where board space is at a premium. Features 2 Low Clamping Voltage 3 4 Small SOT553 SMT Package Stand Off Voltage: 3 V Low Leakage Current Four Separate Unidirectional Configurations for Protection ESD Protection: IEC6100042: Level 4 ESD Protection SCALE 4:1 MILSTD 883C Method 30156: Class 3 SOT553 Complies to USB 1.1 Low Speed & Full Speed Specifications CASE 463B These are PbFree Devices PLASTIC Benefits Provides Protection for ESD Industry Standards: IEC 61000, HBM Protects Four Lines Against Transient Voltage Conditions MARKING DIAGRAM Minimize Power Consumption of the System Minimize PCB Board Space Typical Applications xx M Instrumentation Equipment Serial and Parallel Ports Microprocessor Based Equipment xx = Device Code Notebooks, Desktops, Servers M = Date Code* Cellular and Portable Equipment = PbFree Package (Note: Microdot may be in either location) MAXIMUM RATINGS (T = 25C unless otherwise noted) A Characteristic Symbol Value Unit Peak Power Dissipation (Note 1) P 20 W PK ORDERING INFORMATION Steady State Power 1 Diode (Note 2) P 380 mW D Device Package Shipping Thermal Resistance, R 327 C/W JA JunctiontoAmbient 3.05 mW/C NZQA5V6AXV5T1 SOT553* 4000/Tape & Reel Above 25C, Derate NZQA5V6AXV5T1G SOT553* 4000/Tape & Reel Maximum Junction Temperature T 150 C Jmax Operating Junction and Storage T T 55 to +150 C J stg NZQA6V8AXV5T1 SOT553* 4000/Tape & Reel Temperature Range Lead Solder Temperature (10 seconds T 260 C NZQA6V8AXV5T1G SOT553* 4000/Tape & Reel L duration) NZQA6V8AXV5T3 SOT553* 16000/Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NZQA6V8AXV5T3G SOT553* 16000/Tape & Reel assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current per Figure 5. For information on tape and reel specifications, 2. Only 1 diode under power. For all 4 diodes under power, P will be 25%. D including part orientation and tape sizes, please Mounted on FR 4 board with min pad. refer to our Tape and Reel Packaging Specification See Application Note AND8308/D for further description of Brochure, BRD8011/D. survivability specs. *This package is inherently PbFree. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: November, 2017 Rev. 8 NZQA5V6AXV5/DNZQA5V6AXV5 Series ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T V Maximum Temperature Coefficient of V BR BR I PP I Forward Current F UniDirectional V Forward Voltage I F F Z Maximum Zener Impedance I ZT ZT I Reverse Current ZK Z Maximum Zener Impedance I ZK ZK *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C) A Typ Typ Capacitance Capacitance Breakdown Leakage 0 V Bias 3 V Bias (pF) (pF) Voltage Current V Max I C PP (Note 4) (Note 3) (Note 3) V 1 mA (V) I V V BR RM RM C Per I V I IEC6100042 Device RWM C PP ( A) (V) (A) (Note 5) Device Marking Min Nom Max V Typ Max Typ Max RWM NZQA5V6AXV5 5P 5.3 5.6 5.9 3.0 1.0 13 1.6 13 17 7.0 11.5 Figures 1 and 2 (See Below) NZQA6V8AXV5 6H 6.47 6.8 7.14 4.3 1.0 13 1.6 12 15 6.7 9.5 3. Capacitance of one diode at f = 1 MHz, V = 0 V, T = 25C R A 4. Surge current waveform per Figure 5. 5. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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