P3P8203AMTTBG ON Semiconductor

P3P8203A General Purpose Peak EMI Reduction Device Functional Description P3P8203A is a versatile, 3.3 V LVCMOS Peak EMI reduction device. P3P8203A Table 1. PIN DESCRIPTION Pin Pin Name Type Description 1 XIN/CLKIN Input Crystal connection or External reference clock input. 2 XOUT Output Crystal connection. If using an external reference, this pin should be left open. 3 NC No connection 4 GND Power Ground 5 ModOUT Output Buffered Modulated Clock output. 6 NC No connection 7 SSEXTR Input Analog Deviation Selection through external resistor to GND. 8 VDD Power Supply Voltage Table 2. OPERATING CONDITIONS Symbol Description Min Max Unit V Supply Voltage 3.0 3.6 V DD T Operating Temperature (Ambient Temperature) 0 70 C A C Load Capacitance 15 pF L C Input Capacitance 7 pF IN Table 3. ABSOLUTE MAXIMUM RATING Symbol Description Rating Unit V V Voltage on any input pin with respect to Ground 0.5 to +4.6 V DD, IN T Storage temperature 65 to +125 C STG T Max. Soldering Temperature (10 sec) 260 C s T Junction Temperature 150 C J T Static Discharge Voltage (As per JEDEC STD22 A114 B) 2 KV DV Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 4. ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Unit V Supply Voltage 3.0 3.3 3.6 V DD V Input LOW Voltage 0.35 * V IL V DD V Input HIGH Voltage 0.65 * V IH V DD V Output LOW Voltage I = 8 mA 0.25 * V OL OL V DD V Output HIGH Voltage I = -8 mA 0.75 * V OH OH V DD I Static Supply Current CLKIN pulled LOW 1 mA CC Dynamic Supply Current Unloaded output 18 MHz 5 mA 24 MHz 6 I DD 36 MHz 8 C Load Capacitance 15 pF L Z Output Impedance 24 0