X-On Electronics has gained recognition as a prominent supplier of SBC817-40LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SBC817-40LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SBC817-40LT1G ON Semiconductor

SBC817-40LT1G electronic component of ON Semiconductor
SBC817-40LT1G ON Semiconductor
SBC817-40LT1G Bipolar Transistors - BJT
SBC817-40LT1G  Semiconductors

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See Product Specifications
Part No. SBC817-40LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SS GP XSTR SPCL TR
Datasheet: SBC817-40LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0274 ea
Line Total: USD 82.2 
Availability - 96030
Ship by Fri. 25 Jul to Thu. 31 Jul
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
96030
Ship by Fri. 25 Jul to Thu. 31 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0274
9000 : USD 0.0273
27000 : USD 0.0269
51000 : USD 0.0268
102000 : USD 0.0266
150000 : USD 0.0265
252000 : USD 0.0264
501000 : USD 0.0263

29100
Ship by Fri. 25 Jul to Thu. 31 Jul
MOQ : 6000
Multiples : 3000
6000 : USD 0.0535
6000 : USD 0.0496
9000 : USD 0.0389
24000 : USD 0.0311

1649
Ship by Fri. 01 Aug to Wed. 06 Aug
MOQ : 10
Multiples : 10
10 : USD 0.1436
100 : USD 0.1146
300 : USD 0.0752
3000 : USD 0.057
6000 : USD 0.051
9000 : USD 0.0482

1642
Ship by Wed. 23 Jul to Fri. 25 Jul
MOQ : 1
Multiples : 1
1 : USD 0.238
10 : USD 0.1666
50 : USD 0.119
100 : USD 0.1022
403 : USD 0.0476

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the SBC817-40LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SBC817-40LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The SBC817-40LT1G is a dual, common cathode Schottky barrier rectifier developed by ON Semiconductor. This device has an integrated high power density of 0.5 A average forward current, a rated repetitive peak reverse voltage of 40 V, an integrated low profile package of 1.5 A forward surge current, and a low forward voltage at 0.8 V. It has a very low reverse leakage current of 30 mA. This rectifier is ideal for applications such as DC-DC converters, rectifier bridges, and polarity protection.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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