SCT3080KLGC11 ROHM

SCT3080KLGC11 electronic component of ROHM
SCT3080KLGC11 ROHM
SCT3080KLGC11 SiC MOSFETs
SCT3080KLGC11  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SCT3080KLGC11 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3080KLGC11 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

Part No. SCT3080KLGC11
Manufacturer: ROHM
Category: SiC MOSFETs
Description: SiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS
Datasheet: SCT3080KLGC11 Datasheet (PDF)
Price (USD)
1: USD 15.4344 ea
Line Total: USD 15.43 
Availability : 27
  
Ship by Mon. 18 Aug to Thu. 21 Aug
QtyUnit Price
1$ 15.4344
10$ 13.1945
30$ 11.9903
90$ 10.9411

Availability 19
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 30
Multiples : 30
QtyUnit Price
30$ 19.188
60$ 18.3375
90$ 18.275
120$ 18.2375
150$ 18.0875


Availability 27
Ship by Mon. 18 Aug to Thu. 21 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 15.4344
10$ 13.1945
30$ 11.9903
90$ 10.9411


Availability 570
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 21.132
10$ 14.905
100$ 14.322


Availability 436
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 21
Multiples : 1
QtyUnit Price
21$ 12.9475


Availability 288
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 21
Multiples : 1
QtyUnit Price
21$ 12.9475


Availability 97
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 19
Multiples : 1
QtyUnit Price
19$ 14.1724


Availability 116
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 13
Multiples : 1
QtyUnit Price
13$ 21.58
50$ 10.85
100$ 10.15

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Configuration
Package / Case
Packaging
Series
Technology
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SCT3080KLGC11 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3080KLGC11 and other electronic components in the SiC MOSFETs category and beyond.

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The SCT3080KLGC11 MOSFET is a high-performance switching power device manufactured by ROHM Semiconductor. It is based on an advanced Silicon Carbide (SiC) process, and features a N-Channel 1200 Volt (V) TrenchMOS design for high-speed switching and low on-resistance (Ohm) of 80 mOhm. It is capable of handling a maximum of 31 Amps (A). This device is specially designed to offer extremely low switching losses, allowing higher efficiency power converters. Due to its low on-resistance and greater power capabilities, it is well suited for applications such as solar inverters, electric vehicles, and power supply designs. It also features an optimized gate structure to increase driving speed, reducing EMI noise and further improving efficiency.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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