Product Information

SCT3080KLGC11

SCT3080KLGC11 electronic component of ROHM

Datasheet
MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4: USD 13.0975 ea
Line Total: USD 52.39

224 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 4  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3344 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2
Multiples : 1
2 : USD 17.225
5 : USD 17.225
25 : USD 17.225
50 : USD 17.225
150 : USD 17.225

296 - WHS 2


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 14.5248
10 : USD 12.6366
30 : USD 11.4865
90 : USD 10.5216

2 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 21.8674
10 : USD 21.4402
25 : USD 18.5095
50 : USD 18.2841
100 : USD 17.4179
450 : USD 17.0145

436 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 7
Multiples : 1
7 : USD 13.8514
25 : USD 13.4217
50 : USD 13.1533

2328 - WHS 5


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 30
Multiples : 30
30 : USD 21.2394

407 - WHS 6


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 7
Multiples : 1
7 : USD 15.9232

224 - WHS 7


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 4
Multiples : 1
4 : USD 13.0975
10 : USD 12.8608
50 : USD 11.9928
100 : USD 10.4116
200 : USD 10.3512

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

The SCT3080KLGC11 MOSFET is a high-performance switching power device manufactured by ROHM Semiconductor. It is based on an advanced Silicon Carbide (SiC) process, and features a N-Channel 1200 Volt (V) TrenchMOS design for high-speed switching and low on-resistance (Ohm) of 80 mOhm. It is capable of handling a maximum of 31 Amps (A). This device is specially designed to offer extremely low switching losses, allowing higher efficiency power converters. Due to its low on-resistance and greater power capabilities, it is well suited for applications such as solar inverters, electric vehicles, and power supply designs. It also features an optimized gate structure to increase driving speed, reducing EMI noise and further improving efficiency.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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