This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0779 (2SB779) Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification +0.10 0.40 0.05 +0.10 0.16 0.06 3 Features Low collector-emitter saturation voltage V CE(sat) Satisfactory linearity of forward current transfer ratio h at the FE 1 2 low collector voltage (0.95) (0.95) Mini type package, allowing downsizing of the equipment and 1.90.1 automatic insertion through the tape packing and the magazine +0.20 2.90 0.05 packing. 10 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit 1: Base 2: Emitter Collector-base voltage (Emitter open) V 25 V CBO 3: Collector Collector-emitter voltage (Base open) V 20 V EIAJ: SC-59 CEO Mini3-G1 Package Emitter-base voltage (Collector open) V 7V EBO Marking Symbol: 1A Collector current I 500 mA C Peak collector current I 1A CP Collector power dissipation P 200 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 25 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 20 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7V EBO E C Collector-base cutoff current (Emitter open) I V = 25 V, I = 0 100 nA CBO CB E Collector-emitter cutoff current (Base open) I V = 20 V, I = 0 1 A CEO CE B 1 2 * * Forward current transfer ratio h V = 2 V, I = 500 mA 90 220 FE1 CE C h V = 2 V, I = 1 A 25 FE2 CE C 1 * Collector-emitter saturation voltage V I = 500 mA, I = 50 mA 0.2 0.4 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 500 mA, I = 50 mA 1.2 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 150 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 15 pF ob CB E (Common-emitter reverse transfer) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R h 90 to 155 130 to 220 FE1 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJC00054BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0779 P T V I V I C a CE(sat) C BE(sat) C 100 240 100 I / I = 10 I / I = 10 C B C B 200 10 10 160 25C T = 25C a 1 120 1 75C T = 75C a 80 25C 0.1 0.1 25C 40 0.01 0 0.01 0.01 0.1 1 10 0 40 80 120 160 0.01 0.1 1 10 ( ) Ambient temperature T (C) Collector current I A Collector current I (A) a C C h I f I C V FE C T E ob CB 400 60 600 V = 10 V CB I = 0 E V = 2 V CE T = 25C a f = 1 MHz T = 25C a 50 500 320 40 400 240 30 300 T = 75C a 25C 160 20 200 25C 80 10 100 0 0 0 1 10 100 0.01 0.1 1 10 0.1 1 10 100 ( ) Collector current I (A) Emitter current I (mA) Collector-base voltage V V C E CB 2 SJC00054BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.