Product Information

2SB07920SL

2SB07920SL electronic component of Panasonic

Datasheet
TRANS PNP 150V 0.05A SC-59

Manufacturer: Panasonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000

Stock Image

2SB07920SL
Panasonic

3000 : USD 0.0945
N/A

0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

2SB07920SL
Panasonic

1 : USD 0.2618
10 : USD 0.1654
100 : USD 0.1187
500 : USD 0.0996
1000 : USD 0.0935
N/A

0 - WHS 3


Multiples : 1

Stock Image

2SB07920SL
Panasonic

N/A

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0792 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplication Package Features High collector-emitter voltage (Base open) V Code CEO Low noise voltage NV Mini3-G1 Mini type package, allowing downsizing of the equipment and automatic Pin Name insertion through the tape packing. 1. Base 2. Emitter Absolute Maximum Ratings T = 25C 3. Collector a Parameter Symbol Rating Unit Marking Symbol: I Collector-base voltage (Emitter open) V 150 V CBO Collector-emitter voltage (Base open) V 150 V CEO Emitter-base voltage (Collector open) V 5 V EBO Collector current I 50 mA C Peak collector current I 100 mA CP Collector power dissipation P 200 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 100 mA, I = 0 150 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 100 V, I = 0 1 mA CBO CB E * Forward current transfer ratio h V = 5 V, I = 10 mA 130 450 FE CE C Collector-emitter saturation voltage V I = 30 mA, I = 3 mA 1 V CE(sat) C B Transition frequency f V = 10 V, I = 10 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 4 pF ob CB E (Common base, input open circuited) V = 10 V, I = 1 mA, G = 80 dB, CB C V Noise voltage NV 150 mV R = 100 k, Function = FLAT g Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classication * Rank R S T h 130 to 220 185 to 330 260 to 450 FE Merking symbol IR IS IT Publication date : October 2008 SJC00058CED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0792 2SB0792A I -V 2SB0792 I -V 2SB0792A P -T C CE C BE C a P T I V I V C a C CE C BE 100 120 240 V = 5 V T = 25C CE a I = 10 mA 25C B 9 mA 100 200 80 8 mA T = 75C 25C a 7 mA 6 mA 160 5 mA 80 60 4 mA 60 120 3 mA 40 40 80 2 mA 20 1 mA 20 40 0 0 0 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 0 40 80 120 160 ( ) ( ) Ambient temperature T (C) Collector-emitter voltage V V Base-emitter voltage V V a CE BE 2SB0792A V -I 2SB0792A h -I 2SB0792A f -I CE(sat) C FE C T E V I h I f I CE(sat) C FE C T E 100 600 250 I / I = 10 V = 10 V C B V = 5 V CB CE T = 25C a 500 200 10 400 T = 75C a 150 1 300 25C T = 75C a 100 25C 25C 200 25C 0.1 50 100 0.01 0 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 Collector current I (mA) Collector current I (mA) Emitter current I (mA) C C E 2SB0792A C -V ob CB C V ob CB 10 I = 0 E f = 1 MHz T = 25C a 8 6 4 2 0 1 10 100 Collector-base voltage V (V) CB 2 SJC00058CED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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